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Measurement Techniques

, Volume 61, Issue 8, pp 831–835 | Cite as

Modeling 2T937 Bipolar Transistors Based on Experimental Static and Frequency Characteristics

  • A. L. Khvalin
Article
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A method for modeling the 2T937 transistor is described. Calculations of its static and frequency characteristics are presented and the error in the model is assessed. Optimized parameters of a Gummel–Poon model are taken as the basis for modeling the transistor. It is shown that the model developed here can be used in computer aided design systems as a component base for the development of transistor devices.

Keywords

static input and output characteristics frequency characteristics S-parameters Gummel–Poon model CAD systems bipolar transistor 

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Saratov National Research State UniversitySaratovRussia

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