Measurement Techniques

, Volume 52, Issue 12, pp 1344–1350 | Cite as

The magnetoconcentration effect in the base–substrate pn-junction of a bipolar magnetotransistor

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A negative sensitivity effect in dual-collector lateral npn-type bipolar magnetotransistors, formed in the well, found experimentally, is investigated using instrument-technological modeling. It is established that the sign of the sensitivity is determined by the separation of the electron and hole fluxes in the well–substrate pn-junction in the magnetic field. The modulation of the conductivity in the space-charge region of the pn-junction by the magnetic field is analyzed.

Key words

bipolar magnetotransistor instrument-technological modeling magnetoconcentration effect 
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References

  1. 1.
    I. M. Mitnikova et al., “Investigation of the characteristics of silicon lateral magnetotransistors with two measuring collectors,” Fiz. Tekhn. Poluprov., No. 1, 48 (1978).Google Scholar
  2. 2.
    R. D. Tikhonov, “The sensitivity mechanisms of a bipolar magnetotransistor, Pt. 1,” Izmer. Tekhn., No. 11, 39 (2006); Measur. Techn., 49, No. 11, 1145 (2006).Google Scholar
  3. 3.
    R. D. Tikhonov, “The resolving power of a dual-collector lateral bipolar magnetotransistor,” Izmer. Tekhn., No. 7, 47 (2007); Measur. Techn., 50, No. 7, 763 (2007).Google Scholar
  4. 4.
    R. D. Tikhonov, “The physico-technical characteristics of a dual-collector magnetotransistor,” Prikl. Fiz., No. 4, 147 (2008).Google Scholar
  5. 5.
    R. D. Tikhonov, “Dual-collector lateral bipolar magnetotransistor: negative sensitivity and galvanomagnetic effects,” Open Electrical and Electronic Eng. J., Bentham Sci. Publ. Ltd., 2, 14 (2008).Google Scholar
  6. 6.
    V. V. Amelichev et al., “Modeling of a dual-collector bipolar magnetotransistor and the determination of the mode of thermal compensation of the change in sensitivity,” Datch. Sist., No. 6, 38 (1999).Google Scholar
  7. 7.
    A. V. Kozlov et al., “Investigation of the mechanisms of conversion and relative magnetosensitivity of a triple-collector bipolar magnetosensitive transistor,” Mikroelektronika, No. 3, 219 (2003).Google Scholar
  8. 8.
    R. D. Tikhonov, “Increasing the sensitivity of a bipolar magnetotransistor,” Izmer. Tekhn., No. 2, 51 (2005); Measur. Techn., 48, No. 2, 186 (2005).Google Scholar
  9. 9.
    A. V. Kozlov, M. A. Reveleva, and R. D. Tikhonov, “Investigation of the currents and relative current sensitivity of a bipolar magnetosensitive transistor,” Mikroelektronika, No. 6, 474 (2003).Google Scholar
  10. 10.
    R. D. Tikhonov, “Concentration-recombination mechanism of the sensitivity of bipolar magnetotransistors,” Mikroelektronika, No. 6, 464 (2004).Google Scholar
  11. 11.
    R. D. Tikhonnov, “Sensitivity mechanisms of a bipolar magnetotransistor,” Izmer. Tekhn., No. 1, 55 (2007); Measur. Techn., 50, No. 1, 78 (2007).Google Scholar
  12. 12.
    R. D. Tikhonov, “The effect of the structural dependence of the sign of the sensitivity of a bipolar magnetotransistor,” Mikroelektronika, No. 5, 373 (2008).Google Scholar
  13. 13.
    A. Kozlov, M. Reveleva, and R. Tikhonov, “The optimization of relative current sensitivity of a bipolar magnetotransistor,” Proc. SPIE, 5401, 362 (2004).CrossRefADSGoogle Scholar
  14. 14.
    S. Zee, Physics of Semiconductor Devices, Wiley, New York (2006).Google Scholar
  15. 15.
    M. A. Korolev, “Investigation of the possibility of increasing the sensitivity of lateral bipolar magnetosensitive transistors,” Izv. Vyssh. Ucheb. Zaved. Eketronika, No. 1, 40. (2002).Google Scholar
  16. 16.
    R. D. Tikhonov, “Investigation of a bipolar magnetotransistor,” Proc. SPIE, 6260, 443 (2006).Google Scholar
  17. 17.
    R. D. Tikhonov, “Sign magnetosensitivity of a dual-collector lateral bipolar magnetotransistor,” Proc. SPIE, 7075, Publ. Online Apr. 29 (2008).Google Scholar
  18. 18.
    R. D. Tikhonov et al., “Research of the disbalance mechanism of a dual collector lateral bipolar magnetotransistor,” ibid.Google Scholar
  19. 19.
    R. D. Tikhonov, “An integrated magnetotransistor sensor,” Izmer. Tekhn., No. 4, 50 (2009); Measur. Techn., 52, No. 4, 410 (2009).Google Scholar

Copyright information

© Springer Science+Business Media, Inc. 2009

Authors and Affiliations

  1. 1.Technological Center Scientific-Industrial ComplexMoscow State Institute of Electronic Technology (MIET)MoscowRussia

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