Resistive switching characteristics of Pt/Nb:SrTiO3/LaNiO3 heterostructure
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Herein, Pt/Nb:SrTiO3/LaNiO3(Pt/NSTO/LNO) heterostructures are prepared by the sol–gel method, and the resistive switching (RS) characteristics of NSTO films are studied under different preparation conditions and Nb-doping content. It is shown from SEM images that the grain size of NSTO decreases with the increase of Nb-doping content. It is observed from electrical tests and analysis that the RS phenomenon of the Pt/NSTO/LNO structure can be attributed to the migration of internal oxygen vacancies, which are formed during the material preparation. J–V curves of Pt/NSTO/LNO, prepared under different heat treatment atmospheres, exhibit that pure nitrogen atmosphere results in optimal RS performance. In addition, the RS performance has shown an increasing trend with Nb content up to a threshold limit, followed by a gradual decrease. Furthermore, the RS performance of Pt/NSTO/LNO, prepared at different heat treatment temperatures, was investigated. The results demonstrate that the hysteresis window of RS for the Pt/NSTO/LNO structure first increased with increasing temperature, followed by a decrease. Moreover, the optimal RS performance is achieved at the heat treatment temperature of 700 °C.
All sol-gel process prepared the heteroepitaxial Nb:SrTiO3/LaNiO3 bilayer.
The resistive switching characteristics of the Pt/Nb:SrTiO3/LaNiO3 are studied under different preparation conditions and Nb doping content.
The effect mechanism of oxygen vacancies on the resistive switching characteristics of the Pt/Nb:SrTiO3/LaNiO3 is analyzed.
KeywordsSol–gel J–V curves Resistive switching
This project is funded by China Postdoctoral Science Fundation (No. 2018M643696), Special Scientific Research Project of Shaanxi Provincial Department of Education (19JK0567), and the National Natural Science Foundation of China (No. 51672212 and 51802260).
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Conflict of interest
The authors declare that they have no conflict of interest.
- 29.Andreasson BP, Janousch M, Staub U, Meijer GI, Ramar A, Krbanjevic J, Schaeublin R (2009) Origin of oxygen vacancies in resistive switching memory devices. J Phys: Conf Ser 190:012074Google Scholar