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Journal of Sol-Gel Science and Technology

, Volume 88, Issue 3, pp 601–608 | Cite as

Resistive switching IGZO micro-arrays realized through UV assisted photochemical solution method

  • Lingwei Li
  • Yuanqing Chen
  • Wenwen Qu
  • Yuhang He
  • Hanxiao Yang
  • Na Li
  • Yang Song
  • Yuxia Shen
Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric applications
  • 52 Downloads

Abstract

A low-cost and facile two-step UV photolysis method was used to prepare the InGaZnO (IGZO) resistive switching films and micro-arrays. Using benzoylacetone (BzAc) as the complexing agent, we synthesized a unique IGZO solution sensitive to the UV light of 328 nm. We found that high-performance resistive switching IGZO amorphous films could be obtained by UV irradiation (325~365 nm) at room temperature (first step), and further exposure to deep UV light of 185 and 254 nm at 150 °C (second step). We found that the first and the second steps of the UV soaking play different roles in the formation process of amorphous IGZO films. Combined with the rinsing process, patterned IGZO micro-arrays acting as memristive units were also obtained using this two-step UV photolysis process. The IGZO micro-arrays with a high ratio of 104 of on-state and off-state resistance were obtained.

We synthesized a unique IGZO solution sensitive to the UV light of 328 nm. Using a UV irradiation (325~365 nm) technique at room temperature, IGZO gel film arrays were obtained. Further exposure to deep UV light of 185 and 254 nm at 150 °C made the IGZO arrays exhibit excellent resistive switching properties.

Highlights

  • A novel two-step photolysis solution method was developed to prepare IGZO arrays.

  • The UV irradiation under light of 325~365 nm produced the IGZO gel film arrays.

  • The irradiation under deep UV light enhanced the resistive switching properties of the IGZO films.

Keywords

Resistive switching Memristive IGZO UV irradiation 

Notes

Acknowledgements

This work was supported by the Foundation of Science and Technology of Shaanxi Province (No. 2013KJXX-36).

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.School of Materials Science and TechnologyXi’an University of TechnologyXi’anPeople’s Republic of China
  2. 2.School for Engineering of Matter, Transport and EnergyArizona State UniversityTempeUSA

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