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Journal of Sol-Gel Science and Technology

, Volume 71, Issue 3, pp 530–539 | Cite as

Microstructural and optical characterizations of sol–gel based antimony doped indium oxide coatings on glass

  • S. S. Ghosh
  • S. Neogi
  • P. K. BiswasEmail author
Original Paper

Abstract

Thin films of antimony doped indium oxide on glass has been developed by sol–gel dipping process. Four different Sb: In atomic ratios, 1:99, 4:96, 7:93, 10:90 were selected for the precursors. Pressure flow curve of the precursors were Newtonian which apparently developed homogeneous films baking at 500 °C in air. The EDS study restricted to the study of the films of only two Sb: In atomic ratios, namely 7:93, 10:90 as antimony sublimes during baking. Polycrystalline nature of the nanostructured films were revealed by X-ray diffractogram and SAED analysis. Transmission electron microscopy study shows the presence of nanoclusters of maximum average size, ~11 nm. The band gap evaluation from the absorption spectra suggested the presence of bulk indium oxide, nanoclustered indium oxide and antimony doped indium oxide. Presence of Sb(V) in the system was evidenced from the characteristic absorption spectra in the UV region. Visible transmissivity and electrical resistivity suggested the films to be prospective transparent conducting oxide material. The photoluminescence study exhibited the characteristic emissions for defect centres.

Keywords

Indium antimony oxide film Sol–gel Dip coating Microstructure of semiconductor Photoluminescence 

Notes

Acknowledgments

Authors acknowledge the Director of CSIR-CGCRI for providing instrumental facilities to characterize the developed materials. One of the authors (SSG) gives special thanks to CSIR-HRDG for offering him fellowship (CSIR-SRF).

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.School of Energy StudiesJadavpur UniversityKolkataIndia
  2. 2.Department of PhysicsIndian Institute of Technology RoorkeeRoorkeeIndia

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