Journal of Sol-Gel Science and Technology

, Volume 57, Issue 2, pp 157–163 | Cite as

Influence of single layer thickness on the performance of undoped and Mg-doped CuCrO2 thin films by sol–gel processing

Original Paper

Abstract

Transparent conductive thin films of copper chromium oxide were processed on borosilicate glass by sol–gel technique. The resistivity of the films was decreased by lowering the single layer thickness of multi-layer stacks deposited by dip-coating, as well as by doping with magnesium. The additional effort of increasing the number of coating cycles from four to fifteen and sintering after each coating resulted in denser films with increased crystallite size. But whereas conductivity was improved by this procedure, the transmittance of the thin films simultaneously dropped by more than 10%. The optimum values obtained for an Mg-doped sample were ρ = 0.38Ω cm at T = 26.8%.

Keywords

TCO CuCrO2 Thin films Doping P-type conductivity 

Notes

Acknowledgments

This work has been funded within the framework METCO of the Fraunhofer-Gesellschaft.

References

  1. 1.
    Yanagi H, Inoue S-I, Ueda K, Kawazoe H, Hosono H, Hamada N (2000) J Appl Phys 88:4159CrossRefGoogle Scholar
  2. 2.
    Tsuboi N, Takahashi Y, Kobayashi S, Shimizu H, Kato K, Kaneko F (2003) J Phys Chem Solids 64:1671CrossRefGoogle Scholar
  3. 3.
    Neumann-Spallart M, Pai SP, Pinto R (2007) Thin Solid Films 515:8641CrossRefGoogle Scholar
  4. 4.
    Dong G, Zhang M, Lan W, Dong P, Yan H (2008) Vacuum 82:1321CrossRefGoogle Scholar
  5. 5.
    Barnabé A, Mugnier E, Presmanes L, Tailhades Ph (2006) Mater Lett 60:3468CrossRefGoogle Scholar
  6. 6.
    Mugnier E, Barnabé A, Presmanes L, Tailhades Ph (2008) Thin Solid Films 516:1453CrossRefGoogle Scholar
  7. 7.
    Nagarajan R, Draeseke AD, Sleight AW, Tate J (2001) J Appl Phys 89:8022CrossRefGoogle Scholar
  8. 8.
    Lim WT, Stafford L, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F (2007) Appl Phys Lett 90:142101CrossRefGoogle Scholar
  9. 9.
    Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H, Hosono H (1997) Nature 389:939CrossRefGoogle Scholar
  10. 10.
    Dong GB, Zhang M, Lan W, Dong PM, Zhao XP, Yan H (2009) J Mater Sci Mater Electron 20:193CrossRefGoogle Scholar
  11. 11.
    Banerjee AN, Nandy S, Ghosh CK, Chattopadhyay KK (2007) Thin Solid Films 515:7324CrossRefGoogle Scholar
  12. 12.
    Hoffman RL, Wager JF, Jayaraj MK, Tate J (2001) J Appl Phys 90:5763CrossRefGoogle Scholar
  13. 13.
    Chiu TW, Tonooka K, Kikuchi N (2009) Vacuum 83:614CrossRefGoogle Scholar
  14. 14.
    Hoffman R, Wager J (2006) United States Patent US 7,026,713 B2Google Scholar
  15. 15.
    Lim WT, Sadik PW, Norton DP, Pearton SJ, Ren F (2008) Appl Surf Sci 254:2359CrossRefGoogle Scholar
  16. 16.
    Sadik PW, Ivill M, Craciun V, Norton DP (2009) Thin Solid Films 517:3211CrossRefGoogle Scholar
  17. 17.
    Li D, Fang X, Deng Z, Dong W, Tao R, Zhou S, Wang J, Wang T, Zhao Y, Zhu X (2009) J Alloys Compd. doi: 10.1016/j.jallcom.2009.06.174
  18. 18.
    Lee J-C, Um S-Y, Heo Y-W, Lee J-H, Kim J-J (2009) J Eur Ceram Soc. doi: 10.1016/j.jeurceramsoc.2009.05.025
  19. 19.
    Tonooka K, Shimokawa K, Nishimura O (2002) Thin Solid Films 411:129CrossRefGoogle Scholar
  20. 20.
    Ohashi M, Iida Y, Morikawa H (2002) J Am Ceram Soc 85:270CrossRefGoogle Scholar
  21. 21.
    Tsuboi N, Tosaka K, Kobayashi S, Kato K, Kaneko F (2008) Jpn J Appl Phys 47:588CrossRefGoogle Scholar
  22. 22.
    Götzendörfer S, Polenzky C, Ulrich S, Löbmann P (2009) Thin Solid Films 518:1153CrossRefGoogle Scholar
  23. 23.
    Götzendörfer S, Bywalez R, Löbmann P (2009) J Sol-Gel Sci Technol 52:113CrossRefGoogle Scholar
  24. 24.
    Wang J, Li D, Deng Z, Zhu X, Dong W, Fang X (2009) Huaxue Jinzhan 21:128Google Scholar
  25. 25.
    Löbmann P, Röhlen P (2003) Glass Sci Technol 76:1Google Scholar
  26. 26.
    Bockmeyer M, Löbmann P (2008) J Sol-Gel Sci Technol 45:251CrossRefGoogle Scholar
  27. 27.
    Nostell P, Roos A, Karlsson B (1999) Thin Solid Films 351:170CrossRefGoogle Scholar
  28. 28.
    Bywalez R, Götzendörfer S, Löbmann P (2010) J Mater Chem 20(31):6562CrossRefGoogle Scholar
  29. 29.
    Wang C, Meinhardt J, Löbmann P (2010) J Sol-Gel Sci Technol 53(2):148CrossRefGoogle Scholar
  30. 30.
    Schuler T, Krajewski T, Grobelsek I, Aegerter MA (2004) J Sol-Gel Sci Technol 31:235CrossRefGoogle Scholar
  31. 31.
    Schuler T, Aegerter MA (1999) Thin Solid Fims 351:125CrossRefGoogle Scholar
  32. 32.
    Schuler T, Krajewski T, Grobelsek I, Aegerter MA (2006) Thin Solid Films 502:67CrossRefGoogle Scholar
  33. 33.
    Bruker AXS (2004) Diffrac Plus Evaluation Release 2004, Version 10.0. KarlsruheGoogle Scholar
  34. 34.
    Guinier A (1964) Théorie et techniques de la radiocristallograpie. Dunod, ParisGoogle Scholar
  35. 35.
    Jørgensen JE, Jensen TR, Hanson JC (2008) J Solid State Chem 181:1925CrossRefGoogle Scholar
  36. 36.
    International Centre for Diffraction Data (2004) Pdf-2 release 2004. Newton Square, PennsylvaniaGoogle Scholar
  37. 37.
    Lim SH, Desu S, Rastogi AC (2008) J Phys Chem Solids. doi: 10.1016/j.jpcs.2008.03.007
  38. 38.
    Jacob KT, Kale GM, Iyengar GNK (1986) J Mater Sci 21:2753CrossRefGoogle Scholar
  39. 39.
    Banerjee AN, Maity R, Ghosh PK, Chattopadhyay KK (2005) Thin Solid Films 474:261CrossRefGoogle Scholar
  40. 40.
    Duan N, Sleight AW, Jayaraj MK, Tate J (2000) Appl Phys Lett 77:1325CrossRefGoogle Scholar
  41. 41.
    Rastogi AC, Lim SH, Desu SB (2008) J Appl Phys 104:023712CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.Fraunhofer-Institut für SilicatforschungWürzburgGermany

Personalised recommendations