Journal of Sol-Gel Science and Technology

, Volume 42, Issue 3, pp 221–229 | Cite as

Preparation of Ba(Ti,Sn)O3 thin films by PVP-assisted sol–gel method and their dielectric properties

Article

Abstract

Ba(Ti1−x Sn x )O3 (x = 0.10 or 0.15) thin films were deposited on Si(100) and Pt(111)/TiO x /SiO2/Si(100) substrates via sol–gel spin-coating. Crack-free thin films could be obtained by single-step deposition, where the thickness was about 0.46 and 0.29 μm at 1000 and 2000 rpm, respectively. Circular delaminated parts 100 μm in diameter, however, tended to appear in thicker films deposited at 1000 rpm. On both kinds of substrates, the films were crystallized between 500 and 600 °C, where the perovskite phase emerged as the primary phase, and the formation of single-phase perovskite was basically achieved between 700–800 °C. The films deposited on Pt(111)/TiO x /SiO2/Si(100) substrates, however, tended to have small SnO2 and BaCO3 diffraction peaks, which decreased with increasing spinning rate. The dielectric properties were evaluated on the films deposited on Pt(111)/TiO x /SiO2/Si(100) substrates at 2000 rpm. The films prepared by single-step depositions had dielectric constants of 350 and 230, and dielectric loss of 0.30 and 0.10 at x = 0.1 and 0.15, respectively. The films prepared by two time deposition had dielectric constants of 450 and 250, and dielectric loss of 0.21 and 0.19 at x = 0.10 and 0.15, respectively.

Keywords

Ba(Sn, Ti)O3 BTS Thin film Coating Sol–gel PVP Ferroelectric Dielectric 

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Copyright information

© Springer Science + Business Media, LLC 2007

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringKansai UniversitySuitaJapan

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