Journal of Radioanalytical and Nuclear Chemistry

, Volume 300, Issue 3, pp 1113–1120 | Cite as

Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation

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Abstract

We deposited GaTe thin films with electrochemical growth technique on p-Si (100) substrate and investigated their structural and electrical properties. The electrical characteristics of the Ti/GaTe/p-Si/Al Schottky diode (SD) were determined by means of I–V (current–voltage) and C–V (capacitance–voltage) measurements. The diodes were irradiated with high energy (18 MeV) and low doses (1.38 × 1010 e− cm−2) electrons. The ideality factor values for Ti/GaTe/p-Si/Al structure were calculated as 1.27 and 1.53 and the barrier heights have been obtained as 0.739 and 0.706 eV from I–V measurements before and after each electron irradiations, respectively. Also, the parameters such as built-in potential, Fermi levels, acceptor concentration and barrier height of the Ti/GaTe/p-Si/Al SD have been calculated by the help of C–V measurements before and after each irradiations. The change in parameters was interpreted by the defect formation at the interface due to the electron irradiation.

Keywords

GaTe Schottky diode Electrochemical deposition XRD AFM 
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Copyright information

© Akadémiai Kiadó, Budapest, Hungary 2014

Authors and Affiliations

  1. 1.Department of Mining Engineering, Oltu Earth Sciences FacultyAtatürk UniversityErzurumTurkey
  2. 2.Department of Physics, Faculty of SciencesAtatürk UniversityErzurumTurkey
  3. 3.Department of Physics, Faculty of Arts and SciencesGiresun UniversityGiresunTurkey

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