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Journal of Superconductivity and Novel Magnetism

, Volume 32, Issue 11, pp 3601–3607 | Cite as

Investigation on Electronic Structures and Magnetic Properties of (Mn, Ga) Co-doped SnO2

  • Long Lin
  • Pengtao Wang
  • Jingtao Huang
  • Weiyang YuEmail author
  • Hualong Tao
  • Linghao Zhu
  • Zhanying Zhang
Original Paper
  • 62 Downloads

Abstract

The electronic structures and magnetic properties of (Mn, Ga) co-doped SnO2 are studied by the first-principles calculations in full-potential linearized augmented plane wave formalism within generalized gradient approximations. We found that the doped system favors the ferromagnetic state and room-temperature ferromagnetism can be expected in it. The origin of ferromagnetism can be attributed to p-d exchange interactions as Mn-O-Mn. Ga acts as acceptor in (Mn, Ga) co-doped SnO2 host and can donate one hole, increasing the carrier concentration and thus leading to a more stable ferromagnetic state. These results suggest a recipe obtaining promising dilute magnetic semiconductor by doping nonmagnetic elements in SnO2 matrix.

Keywords

First principles Dilute magnetic semiconductors Electronic structure SnO2 

Notes

Acknowledgments

Computational resources have been provided by the Henan Polytechnic University high-performance grid computing platform.

Funding Information

This work was supported by the Key Projects of NSFC-Henan Joint Fund (U1704255), the National Natural Science Foundation of China (11804081), the Natural Science Foundation of Henan Province (182300410288), the Innovation Scientists and Technicians Troop Construction Projects of Henan Province (CXTD2017089), Science and Technology of Henan Province (182102210305), the Henan Postdoctoral Science Foundation (Lin’s), the Program for Innovative Research Team of Henan Polytechnic University (T2016-2), the Key Research Project for the Universities of Henan Province (19A140009), the Doctoral Foundation of Henan Polytechnic University (B2018-38), and the Open Project of Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province (LRME201601).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Long Lin
    • 1
  • Pengtao Wang
    • 1
  • Jingtao Huang
    • 1
    • 2
  • Weiyang Yu
    • 2
    Email author
  • Hualong Tao
    • 3
  • Linghao Zhu
    • 1
  • Zhanying Zhang
    • 1
  1. 1.Cultivating Base for Key Laboratory of Environment-Friendly Inorganic Materials in Henan Province, School of Materials Science and EngineeringHenan Polytechnic UniversityJiaozuoChina
  2. 2.School of Physics and Electronic Information EngineeringHenan Polytechnic UniversityJiaozuoChina
  3. 3.Liaoning Key Materials Laboratory for Railway, School of Materials Science and EngineeringDalian Jiaotong UniversityDalianChina

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