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Memristive Properties of Oxide-based High-Temperature Superconductors

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The study of memristive properties or effect of resistive switchings in four classes of high-temperature superconductors (HTSC), namely Bi2Sr2CaCu2O8+y (BSCCO), YBa2Cu3O7−y (YBCO), Ba0.6K0.4BiO3−y (BKBO), and Nd2−xCexCuO4−y (NCCO), is presented. The purpose of this study is to reveal functional properties of HTSC which become apparent in the effects under discussion, prospects of usage of HTSC-based memristors in applications, and search for new mechanisms of strongly correlated nature to realize new-generation memristors (Tulina 1). The properties are as follows: undergoing the metal-insulator transition at oxygen doping, transport anisotropy, and existence of charge reservoirs through which doping of conductive copper–oxygen layers is carried out. These are the main functional properties of HTSC which allows their usage in memristors. By the example of study of bipolar effect of resistive switching in HTSC-based heterojunctions, it is shown how one can form memristor structures based on HTSC using their functional properties.

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This work was supported by the Russian Foundation for Basic Research (project no. 19-29-03021 mk)

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Correspondence to A. A. Ivanov.

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Tulina, N.A., Ivanov, A.A. Memristive Properties of Oxide-based High-Temperature Superconductors. J Supercond Nov Magn (2020).

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  • HTSC
  • Memristor
  • Resistive switching
  • Doping
  • Oxygen vacancies
  • Thin films
  • Heterostructures