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Strain and Electronic Nematicity in La2-xSrxCuO4

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Abstract

Electronic nematicity has previously been observed in La2-xSrxCuO4 thin films by the angle-resolved transverse resistivity method with a director whose orientation is always pinned to the crystal axes when the film is grown on an orthorhombic substrate but not when the substrate is tetragonal. Here we report on measurements of thin films grown on (tetragonal) LaSrAlO4 and subsequently placed in an apparatus that allows the application of uniaxial compressive strain. The apparatus applied enough force to produce a 1% orthorhombicity in LaSrAlO4 and yet no change in the electronic nematicity was observed in films under strain compared to when they were unstrained. The lattice effects are weak, and the origin of nematicity is primarily electronic.

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Funding

The research at Brookhaven National Laboratory was supported by the US Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division. X. H. was supported by the Gordon and Betty Moore Foundation’s EPiQS Initiative through Grant GBMF4410.

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Authors and Affiliations

  1. Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, NY, 11973, USA

    Anthony T. Bollinger, Ze-Bin Wu, Longlong Wu, Xi He, Ilya Drozdov, Jie Wu, Ian Robinson & Ivan Božović

  2. Applied Physics Department, Yale University, New Haven, CT, 06520, USA

    Xi He & Ivan Božović

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  1. Anthony T. Bollinger
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  2. Ze-Bin Wu
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  3. Longlong Wu
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  4. Xi He
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  6. Jie Wu
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  7. Ian Robinson
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  8. Ivan Božović
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Correspondence to Anthony T. Bollinger.

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Bollinger, A.T., Wu, ZB., Wu, L. et al. Strain and Electronic Nematicity in La2-xSrxCuO4. J Supercond Nov Magn 33, 93–98 (2020). https://doi.org/10.1007/s10948-019-05327-x

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  • DOI: https://doi.org/10.1007/s10948-019-05327-x

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