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Effects of Ag Doping and Point Defect on the Magnetism of ZnO

  • Y. J. Liu
  • Q. Y. Hou
  • Z. C. Xu
  • W. L. Li
Original Paper
  • 14 Downloads

Abstract

The magnetism sources and magnetic mechanism of Ag doping and point defect, which coexist in the presence of ZnO, are frequently controversial. To solve these problems, the effects of Ag doping and Zn or O vacancy on the magnetism of ZnO were investigated using geometry optimization and energy calculation according to the first-principles generalized gradient approximation + U (GGA+U) method of density functional theory. Results revealed that the system which Ag doping and Zn vacancy coexists in ZnO could achieve room-temperature ferromagnetism. This system had an extremely high spin polarization, which was advantageous for the spin electron injection sources applied in dilute magnetic semiconductors. Result also revealed that the magnetism of Zn14AgO16 was caused by the electron hybrid coupling effects among the O-2p, Ag-4d, Ag-5s, and Zn-4s orbits. And these effects were produced by the hole carriers after complexes were formed by the Ag doping and Zn vacancy. With regard to the most stable structure of the ground state, all doping systems which Ag replacing Zn and O vacancy coexisted in ZnO and those which Ag replacing Zn, interstitial Ag, and O vacancy coexisted in ZnO were all non-magnetic. Thus, these doping systems were unsuitable for dilute magnetic semiconductors. By contrast, the doping systems of interstitial Ag and Zn vacancy were magnetic, although the magnetism was relatively weak, thus rendering such systems inapplicable as well.

Keywords

Ag doping Point defect First-principles ZnO Magnetism Vacancy 

Notes

Funding Information

This work was supported by the National Natural Science Foundation of China (grant nos. 61366008 and 61664007).

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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.College of ScienceInner Mongolia University of TechnologyHohhotPeople’s Republic of China
  2. 2.Inner Mongolia Key Laboratory of Thin Film and CoatingsHohhotPeople’s Republic of China
  3. 3.School of Materials Science and EngineeringInner Mongolia University of TechnologyHohhotPeople’s Republic of China

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