The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities

  • Miloud Boutaleb
  • Bendouma DoumiEmail author
  • Allel MokaddemEmail author
  • Adlane Sayede
  • Abdelkader Tadjer
Original Paper


The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties for spintronics applications. We have used the full-potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structures and magnetic properties of Al1−x TM x As at low concentration x = 0.0625 of transition metal (TM = V, Cr, and Mn) atoms. We have found that the majority-spin states of Al0.9375 TM 0.0625As compounds are metallic due to large p-d hybridization between 3d levels of TM and the 4p levels of As around Fermi level, whereas the minority-spin states have semiconductor character. These compounds exhibit a half-metallic behavior with spin polarization of 100%, where the ferromagnetism is originated from double-exchange mechanism. Therefore, Al0.9375 TM 0.0625As (TM = V, Cr, and Mn) materials seem to be good candidates for spin injection in the field of spintronics applications.


Magnetic properties p-d exchange interaction 3d (TM = V, Cr, and Mn)-doped AlAs 


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Authors and Affiliations

  1. 1.Modelling and Simulation in Materials Science Laboratory, Physics DepartmentDjillali Liabes University of Sidi Bel-AbbesSidi Bel-AbbesAlgeria
  2. 2.Faculty of SciencesDr. Tahar Moulay University of SaïdaSaïdaAlgeria
  3. 3.Department of Physics, Faculty of SciencesDr. Tahar Moulay University of SaïdaSaïdaAlgeria
  4. 4.Centre Universitaire Nour Bachir El BayadhEl BayadhAlgeria
  5. 5.Unité de Catalyse et Chimie du Solide (UCCS), UMR CNRS 8181, Faculté des SciencesUniversité d’ArtoisLensFrance

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