Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure

  • N. G. ChecheninEmail author
  • P. N. Chernykh
  • S. A. Dushenko
  • I. O. Dzhun
  • A. Y. Goikhman
  • V. V. Rodionova
Original Paper


Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations.


Spin-valve structure Reversal asymmetry Magnetoresistance Vibration sample magnetometry Exchange bias Coercivity 



The work was partially supported by RFFI 12-02-31541, MSU Program of Development, and by Ministry of Education and Science of RF via g/c 14.513.11.0116.


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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • N. G. Chechenin
    • 1
    Email author
  • P. N. Chernykh
    • 1
  • S. A. Dushenko
    • 1
    • 2
  • I. O. Dzhun
    • 1
  • A. Y. Goikhman
    • 3
  • V. V. Rodionova
    • 2
    • 3
    • 4
  1. 1.Skobeltsyn Institute of Nuclear PhysicsLomonosov Moscow State UniversityMoscowRussia
  2. 2.Faculty of PhysicsLomonosov Moscow State UniversityMoscowRussia
  3. 3.Immanuel Kant Baltic Federal UniversityKaliningradRussia
  4. 4.Departamento de Fisica de Materiales, Facultad de QuimicasUPV/EHUSan SebastianSpain

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