Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure
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Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations.
KeywordsSpin-valve structure Reversal asymmetry Magnetoresistance Vibration sample magnetometry Exchange bias Coercivity
The work was partially supported by RFFI 12-02-31541, MSU Program of Development, and by Ministry of Education and Science of RF via g/c 14.513.11.0116.
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