Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure
- 268 Downloads
Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations.
KeywordsSpin-valve structure Reversal asymmetry Magnetoresistance Vibration sample magnetometry Exchange bias Coercivity
The work was partially supported by RFFI 12-02-31541, MSU Program of Development, and by Ministry of Education and Science of RF via g/c 14.513.11.0116.
- 10.Rao, B.P., Kumar, S.A., Caltun, O.F., Kim, C.: Dependence of exchange bias field and coercivity on spacer layer thickness in FeMn/NiFe/Cu/NiFe spin valve structures. J. Optoelectron. Adv. Mater. 10, 1881–1884 (2008) Google Scholar
- 15.Khomenko, E.V., Chechenin, N.G., Dzhun’, I.O., Perov, N.S., Samsonova, V.V., Goı̌khman, A.Y., Zenkevich, A.V.: Magnetic anisotropy in IrMn/Co structures with an alternative sequence of deposition of antiferromagnetic and ferromagnetic layers. Phys. Solid State 52, 1701–1708 (2010) CrossRefADSGoogle Scholar