Journal of Superconductivity and Novel Magnetism

, Volume 26, Issue 12, pp 3449–3454 | Cite as

Electrical Spin Injection from Ferromagnetic Nanocontacts into Nondegenerated Silicon at Low Temperatures

  • C. I. L. de Araujo
  • M. A. Tumelero
  • J. I. Avila
  • A. D. C. Viegas
  • N. Garcia
  • A. A. Pasa
Original Paper


We present results on the magnetoresistance of the system Ni/Al2O3/Si/Al2O3/Ni fabricated in lateral nanostructures. The substrate n-type Si is a nondegenerated semiconductor with a doping level of 1015 cm−3. The results are presented between 11 and 30 K, where the electrical resistivity of the semiconductor varies about 4 orders of magnitude. The reduction of magnetoresistance at 30 K is consistent with the standard theory for spin injection between a metal and a semiconductor. By fitting the data with \(e^{ - t_{N} / L_{\mathrm{SD}}}\), the diffusion condition, as a function of the channel length tN, where the magnetoresistance takes place, we deduced the values of spin diffusion length LSD and spin lifetime τs.


Spin injection Magnetoresistance Nanocontacts Nondegenerate silicon 


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • C. I. L. de Araujo
    • 1
  • M. A. Tumelero
    • 1
  • J. I. Avila
    • 1
  • A. D. C. Viegas
    • 1
  • N. Garcia
    • 1
    • 2
  • A. A. Pasa
    • 1
  1. 1.Laboratório de Filmes Finos e Superfícies (LFFS), Departamento de FísicaUniversidade Federal de Santa CatarinaFlorianópolisBrazil
  2. 2.Laboratorio de Física de Sistemas Pequeños y NanotecnologíaConsejo Superior de Investigaciones Científicas (CSIC)MadridSpain

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