Journal of Superconductivity and Novel Magnetism

, Volume 26, Issue 12, pp 3449–3454 | Cite as

Electrical Spin Injection from Ferromagnetic Nanocontacts into Nondegenerated Silicon at Low Temperatures

  • C. I. L. de Araujo
  • M. A. Tumelero
  • J. I. Avila
  • A. D. C. Viegas
  • N. Garcia
  • A. A. Pasa
Original Paper

Abstract

We present results on the magnetoresistance of the system Ni/Al2O3/Si/Al2O3/Ni fabricated in lateral nanostructures. The substrate n-type Si is a nondegenerated semiconductor with a doping level of 1015 cm−3. The results are presented between 11 and 30 K, where the electrical resistivity of the semiconductor varies about 4 orders of magnitude. The reduction of magnetoresistance at 30 K is consistent with the standard theory for spin injection between a metal and a semiconductor. By fitting the data with \(e^{ - t_{N} / L_{\mathrm{SD}}}\), the diffusion condition, as a function of the channel length tN, where the magnetoresistance takes place, we deduced the values of spin diffusion length LSD and spin lifetime τs.

Keywords

Spin injection Magnetoresistance Nanocontacts Nondegenerate silicon 

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • C. I. L. de Araujo
    • 1
  • M. A. Tumelero
    • 1
  • J. I. Avila
    • 1
  • A. D. C. Viegas
    • 1
  • N. Garcia
    • 1
    • 2
  • A. A. Pasa
    • 1
  1. 1.Laboratório de Filmes Finos e Superfícies (LFFS), Departamento de FísicaUniversidade Federal de Santa CatarinaFlorianópolisBrazil
  2. 2.Laboratorio de Física de Sistemas Pequeños y NanotecnologíaConsejo Superior de Investigaciones Científicas (CSIC)MadridSpain

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