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Influence of Geometry on the Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurement

  • H. MahmoudiEmail author
  • V. Sverdlov
  • S. Selberherr
Original Paper

Abstract

A memristor is characterized by its electrical memory resistance (memristance), which is a function of the historic profile of the applied current (voltage). This unique ability allows reducing charge- and flux-based measurements to straightforward resistance measurements. The memristive measurement seeks a memristor with a constant modulation of the memristance (memductance) with respect to the charge (flux) for charge (flux)-based measurements. In this work the geometry dependent memristive behavior of a spintronic device is studied to demonstrate the possibility of both charge- and flux-based sensing, using spintronic memristors with different device geometries. The dynamic properties of a propagating magnetic domain wall in different geometrical structures make the spintronic memristor suitable for the charge-based capacitance and flux-based inductance measurements.

Keywords

Magnetic domain wall Memristive measurement Spintronic memristor 

Notes

Acknowledgement

The work is supported by the European Research Council through the grant #247056 MOSILSPIN.

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Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  1. 1.Institute for MicroelectronicsTechnische Universität WienWienAustria

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