Investigations of Structural, Electronic, and Half-metallic Ferromagnetic Properties in (Al, Ga, In)1−xMxN (M = Fe, Mn) Diluted Magnetic Semiconductors

  • B. Doumi
  • A. Tadjer
  • F. Dahmane
  • D. Mesri
  • H. Aourag
Review Paper
First Online:
Received:
Accepted:

Abstract

We investigate the structural, electronic, and magnetic properties of (M = Fe, Mn)-based zinc blende diluted magnetic semiconductors (DMS) (Al, Ga, In)1−xMxN for (x=0.0625,0.125,0.25), using first-principles calculations with the full-potential linearized augmented plane waves (FP-LAPW) method within the density functional theory and local spin-density approximation. The analysis of electronic structures and magnetic properties show that (Al, Ga, In)1−xFexN at (x=0.0625,0.125,0.25) are magnetic insulators, and In1−xMnxN at (x=0.0625,0.125) are metallic in nature. On the other hand the (Al, Ga)1−xMnxN at (x=0.0625,0.125,0.25) and In0.75Mn0.25N are half-metallic ferromagnets with magnetic spin polarization of 100 %, where the ferromagnetic ground states result from a double-exchange mechanism, and these compounds are predicted to be good candidates for spintronic applications.

Keywords

Spintronics Half-metals Double-exchange mechanism (Fe, Mn) doped III–V nitrides 

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Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  • B. Doumi
    • 1
  • A. Tadjer
    • 1
  • F. Dahmane
    • 1
  • D. Mesri
    • 1
  • H. Aourag
    • 2
  1. 1.Modelling and Simulation in Materials Science Laboratory, Physics DepartmentDjillali Liabes University of Sidi Bel-AbbesSidi Bel-AbbesAlgeria
  2. 2.Laboratoire d’Etude et Prédiction des Matériaux (LEPM), Unité de Recherche Matériaux et Energies Renouvelables (URMER)Université Abou Bekr Belkaid-TlemcenTlemcenAlgeria

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