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Comparison of the Mid-Infrared Magneto-Optical Response of Ga1−x Mn x As Films Grown by Molecular Beam Epitaxy and Ion Implantation and Pulsed Laser Melting

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Abstract

We have carried out mid-infrared magneto-optical studies of Ga1−x Mn x As films grown using two different techniques: low temperature molecular beam epitaxy (LT-MBE) and a combination of ion-implantation and pulsed laser melting (II-PLM). The second method is a high temperature growth technique which minimizes the formation of Mn interstitials. Both samples exhibit a ferromagnetic response with similar Curie temperatures (T C). The samples show qualitatively similar behavior in below bandgap Faraday and Kerr measurements, which probe the valence band structure of the materials. This suggests that the same mid-infrared transitions are dominating the magneto-optical response of both samples.

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Authors and Affiliations

  1. Physics Department, University at Buffalo, SUNY, Buffalo, USA

    G. Acbas & J. Cerne

  2. Physics Department, Texas A&M University, College Station, USA

    J. Sinova

  3. Materials Department, University of California, Santa Barbara, USA

    M. A. Scarpulla

  4. Material Science and Engineering Department, University of California, Berkeley, USA

    O. D. Dubon

  5. Institute of Physics, Acad. of Sciences of the Czech Republic, Prague, Czech Republic

    M. Cukr & V. Novak

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  1. G. Acbas
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  2. J. Sinova
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  3. M. A. Scarpulla
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  4. O. D. Dubon
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  5. M. Cukr
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  6. V. Novak
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  7. J. Cerne
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Correspondence to G. Acbas.

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Acbas, G., Sinova, J., Scarpulla, M.A. et al. Comparison of the Mid-Infrared Magneto-Optical Response of Ga1−x Mn x As Films Grown by Molecular Beam Epitaxy and Ion Implantation and Pulsed Laser Melting. J Supercond Nov Magn 20, 457–460 (2007). https://doi.org/10.1007/s10948-007-0246-3

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  • DOI: https://doi.org/10.1007/s10948-007-0246-3

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