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Microwave and Terahertz Surface Resistance of MgB2 Thin Films

  • B. B. Jin
  • T. Dahm
  • F. Kadlec
  • P. Kuzel
  • A. I. Gubin
  • Eun-Mi Choi
  • Hyun Jung Kim
  • Sung-Ik Lee
  • W. N. Kang
  • S. F. Wang
  • Y. L. Zhou
  • A. V. Pogrebnyakov
  • J. M. Redwing
  • X. X. Xi
  • N. Klein
Article

Abstract

The knowledge of the surface resistance R s of superconducting thin film at microwave and terahertz (THz) regions is significant to design, make and assess superconducting microwave and THz electronic devices. In this paper we reported the R s of MgB2 films at microwave and THz measured with sapphire resonator technique and the time-domain THz spectroscopy, respectively. Some interesting results are revealed in the following: (1) A clear correlation is found between R s and normal-state resistivity right above T c, ρ0, i.e., R s decreases almost linearly with the decrease of ρ0. (2) A low residual R s, less than 50 μΩ at 18 GHz is achieved by different deposition techniques. In addition, between 10 and 14 K, MgB2 has the lowest R s compared with two other superconductors Nb3Sn and the high-temperature superconductor YBa2Cu3O7−δ(YBCO). (3) From THz measurement it is found that the R s of MgB2 up to around 1 THz is lower than that of copper and YBCO at the temperature below 25 K. (4) The frequency dependence of R s follows ω n , where ω is angular frequency, and n is power index. However, n changes from 1.9 at microwave to 1.5 at THz. The above results clearly give the evidences that MgB2 thin film, compared with other superconductors, is of advantage to make superconducting circuits working in the microwave and THz regions.

Keywords

ZnTe Coherence Length Power Index Tunneling Junction MgB2 Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, Inc. 2006

Authors and Affiliations

  • B. B. Jin
    • 1
  • T. Dahm
    • 2
  • F. Kadlec
    • 3
  • P. Kuzel
    • 3
  • A. I. Gubin
    • 1
  • Eun-Mi Choi
    • 4
  • Hyun Jung Kim
    • 4
  • Sung-Ik Lee
    • 4
  • W. N. Kang
    • 5
  • S. F. Wang
    • 6
  • Y. L. Zhou
    • 6
  • A. V. Pogrebnyakov
    • 7
    • 8
  • J. M. Redwing
    • 8
  • X. X. Xi
    • 7
    • 8
  • N. Klein
    • 1
  1. 1.Institut für Schichten und Grenzflächen (ISG) and cniCenter of Nanoelectronic Systems for Information TechnologyJülichGermany
  2. 2.Institut für Theoretische PhysikUniversität TübingenTübingenGermany
  3. 3.Institute of Physics, Academy of Sciences of the Czech Rep.Praha 8Czech Republic
  4. 4.National Creative Research Initiative Center for Superconductivity, Department of PhysicsPohang University of Science and TechnologyPohangKorea
  5. 5.Department of PhysicsPukyung National UniversityPusanKorea
  6. 6.Laboratory of Optical PhysicsInstitute of Physics and Center of Condensed Matter Physics, Chinese Academy of ScienceBeijingP. R. China
  7. 7.Department of PhysicsThe Pennsylvania State UniversityUniversity ParkUSA
  8. 8.Department of Material Science and EngineeringThe Pennsylvania State UniversityUniversity ParkUSA

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