Comparison of Performance of n- and p-Type Spin Transistors With Conventional Transistors
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A spintronic device that has stimulated much research interest is the Datta–Das spin transistor. The mechanism behind it called the Rashba effect is that an applied voltage gives rise to a spin splitting. We propose ways to optimize this effect. The relevant spin splitting in k-space is predicted to increase with electric field at a rate that is more than two orders of magnitude larger for holes than for electrons. Furthermore, the almost negligible lattice-mismatch between GaAs and AlGaAs can be used to further enhance the advantage of hole-based spin transistors. Compared to present transistors we conclude that electron-based spin transistors will have problems to become competitive but hole-based ones are much more promising.
KeyWordsspintronics transistor quantum well spin splitting hole subband
We gratefully acknowledge financial support from the Swedish Research Council. We also thank P.-E. Hellström, U. Westergren, and B. Willén for stimulating discussions.
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