Comparison of Performance of n- and p-Type Spin Transistors With Conventional Transistors
- 103 Downloads
A spintronic device that has stimulated much research interest is the Datta–Das spin transistor. The mechanism behind it called the Rashba effect is that an applied voltage gives rise to a spin splitting. We propose ways to optimize this effect. The relevant spin splitting in k-space is predicted to increase with electric field at a rate that is more than two orders of magnitude larger for holes than for electrons. Furthermore, the almost negligible lattice-mismatch between GaAs and AlGaAs can be used to further enhance the advantage of hole-based spin transistors. Compared to present transistors we conclude that electron-based spin transistors will have problems to become competitive but hole-based ones are much more promising.
KeyWordsspintronics transistor quantum well spin splitting hole subband
We gratefully acknowledge financial support from the Swedish Research Council. We also thank P.-E. Hellström, U. Westergren, and B. Willén for stimulating discussions.
- 1.D. D. Awschalom, M. E. Flatté, and N. Samarth, Sci. Am. June 2002, p. 52.Google Scholar
- 5.R. Winkler, Springer Tracts in Modern Physics, Vol. 191 (Springer, Berlin, 2003).Google Scholar
- 8.International Technology Roadmap for Semiconductors (ITRS) (2003). available at http://public.itrs.net/Files/2003ITRS/Home2003.htm.
- 14.S. J. Pearton, C. R. Abernathy, D. P. Norton, A. F. Hebard, Y. D. Park, L. A. Boatner and J. D. Budai, Mater. Sci. Eng. R40, 137 (2003); especially Table 1.Google Scholar