On-line determination of average grain size of polycrystalline silicon from melt duration of molten silicon
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We demonstrate a method of on-line determination of the average grain size of polycrystalline silicon (poly-Si) deduced from the melt duration of molten silicon during the phase transformation using an in-situ optical measurement system. Optical measurements revealed that the entire phase transformation processes are melting, nucleation, and resolidification. The average grain size of poly-Si can be directly deduced from the melt duration of molten Si under a thickness uniformity of precursor a-Si thin films below ±5%, a pulse-to-pulse variation in the excimer-laser-beam energy below 2% (standard deviation), and a laser-beam spatial homogeneity below 2.5%.
Keywordsoptical measurements grain size polycrystalline silicon melt duration
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