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Electro-optical Characterization of Superconducting Nanowire Single-Photon Detectors Fabricated on 3C Silicon Carbide

  • F. MartiniEmail author
  • A. Gaggero
  • F. Mattioli
  • R. Leoni
Article
  • 54 Downloads

Abstract

Silicon carbide (SiC) is a promising candidate as a material platform for photonic quantum technologies due to the coexistence of quantum emitters and a non-centrosymmetric crystal structure. The realization of a single-photon detector was hampered from both the poor surface quality and the difficulties in micromachining this material. In this work, we realized superconducting nanowire single-photon detectors (SNSPDs) integrated on top of high-quality 3C SiC whose electro-optical characterization was performed thanks to a novel alignment method. We demonstrate that SNSPDs with high internal efficiency can be fabricated which is a fundamental building block toward the realization of complex architectures in this platform.

Keywords

SNSPD SiC Quantum photonics 

Notes

Acknowledgements

This work was financially supported by the Project H2020-MSCA-IF-2017, No. 795923, SHAMROCK “Superconductive MiR phOton Counter.”

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Istituto di Fotonica e Nanotecnologie - CNRRomeItaly

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