Electro-optical Characterization of Superconducting Nanowire Single-Photon Detectors Fabricated on 3C Silicon Carbide
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Silicon carbide (SiC) is a promising candidate as a material platform for photonic quantum technologies due to the coexistence of quantum emitters and a non-centrosymmetric crystal structure. The realization of a single-photon detector was hampered from both the poor surface quality and the difficulties in micromachining this material. In this work, we realized superconducting nanowire single-photon detectors (SNSPDs) integrated on top of high-quality 3C SiC whose electro-optical characterization was performed thanks to a novel alignment method. We demonstrate that SNSPDs with high internal efficiency can be fabricated which is a fundamental building block toward the realization of complex architectures in this platform.
KeywordsSNSPD SiC Quantum photonics
This work was financially supported by the Project H2020-MSCA-IF-2017, No. 795923, SHAMROCK “Superconductive MiR phOton Counter.”
- 5.D.J. Christle, P.V. Klimov, C.F. de las Casas, K. Szász, V. Ivády, V. Jokubavicius, J. Ul Hassan, M. Syväjärvi, W.F. Koehl, T. Ohshima, N.T. Son, E. Janzén, Á. Gali, D.D. Awschalom, Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface. Phys. Rev. X 7, 021046 (2017)Google Scholar
- 18.J.R. Gao, M. Hajenius, F.D. Tichelaar, T.M. Klapwijk, B. Voronov, E. Grishin, G. Gol’Tsman, C.A. Zorman, M. Mehregany, Monocrystalline NbN nanofilms on a 3C-SiCSi substrate. Appl. Phys. Lett. 91, 3–6 (2007)Google Scholar