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Journal of Low Temperature Physics

, Volume 191, Issue 5–6, pp 344–353 | Cite as

Magnetometry with Low-Resistance Proximity Josephson Junction

  • R. N. JabdaraghiEmail author
  • J. T. Peltonen
  • D. S. Golubev
  • J. P. Pekola
Article

Abstract

We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about \(55\;\mathrm {nA}/\mathrm {\Phi }_0\) in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).

Keywords

Proximity effect SQUIPT SNS junction Nb-SQUIPT 

Notes

Acknowledgements

The work has been supported by the Academy of Finland (Project Nos. 284594, 275167, and 312057). We acknowledge Micronova Nanofabrication Centre of OtaNano research infrastructure for providing the processing facilities, and for the sputtered Nb films.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • R. N. Jabdaraghi
    • 1
    Email author
  • J. T. Peltonen
    • 1
  • D. S. Golubev
    • 1
  • J. P. Pekola
    • 1
  1. 1.QTF Centre of Excellence, Department of Applied PhysicsAalto UniversityAaltoFinland

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