Journal of Low Temperature Physics

, Volume 189, Issue 3–4, pp 204–216 | Cite as

Thermal Relaxation in Titanium Nanowires: Signatures of Inelastic Electron-Boundary Scattering in Heat Transfer

  • Teemu Elo
  • Pasi Lähteenmäki
  • Dmitri Golubev
  • Alexander Savin
  • Konstantin Arutyunov
  • Pertti Hakonen


We have employed noise thermometry for investigations of thermal relaxation between the electrons and the substrate in nanowires patterned from 40-nm-thick titanium film on top of silicon wafers covered by a native oxide. By controlling the electronic temperature \(T_\mathrm{e}\) by Joule heating at the base temperature of a dilution refrigerator, we probe the electron–phonon coupling and the thermal boundary resistance at temperatures \(T_\mathrm{e}= 0.5\)–3 K. Using a regular \(T^5\)-dependent electron–phonon coupling of clean metals and a \(T^4\)-dependent interfacial heat flow, we deduce a small contribution for the direct energy transfer from the titanium electrons to the substrate phonons due to inelastic electron-boundary scattering.


Thermal contact Thermal relaxation Electron-phonon coupling Kapitza resistance Electronic Kapitza conductance Shot noise thermometry Titanium 



This work was supported by the Academy of Finland (Grant Nos. 284594, LTQ CoE), and by the European Research Council (Grant No. 670743). This research made use of the OtaNano Low Temperature Laboratory infrastructure of Aalto University, that is part of the European Microkelvin Platform. Konstantin Arutyunov acknowledges the support of the Russian Science Foundation Grant No. 16-12-10521.


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Copyright information

© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  1. 1.Low Temperature Laboratory, Department of Applied PhysicsAalto UniversityEspooFinland
  2. 2.National Research University Higher School of Economics, Moscow Institute of Electronics and MathematicsMoscowRussia
  3. 3.Kapitza Institute for Physical ProblemsRussian Academy of ScienceMoscowRussia

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