Journal of Low Temperature Physics

, Volume 185, Issue 5–6, pp 712–716 | Cite as

Ab Initio Study of Deformation Influence on the Electronic Properties of Graphene Structures Containing One-Dimensional Topological Defects

  • A. A. Valishina
  • Y. V. Lysogorskiy
  • O. V. Nedopekin
  • D. A. Tayurskii
Article
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Abstract

The band structures of single and bilayer graphene with one-dimensional topological defects were calculated along the defect line, and appearance of the flat band near the Fermi level was observed. In addition, the influence of deformation (compression/expansion) on the flat band was studied. It was shown that compression across the grain boundary leads to disappearance of the flat band near the Fermi level, while the stretching along this direction does not significantly change the band structure. However, neither compression nor stretching along the grain boundary destroys the flat band.

Keywords

Ab initio Graphene Defects Band structure Flat band 
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Notes

Acknowledgments

The work was supported by Russian Government Program of Competitive Growth of Kazan Federal University.

References

  1. 1.
    V. Ginzburg, Phys. Lett. 13(2), 101 (1964)ADSCrossRefGoogle Scholar
  2. 2.
    K. Antonowicz, Nature 247, 358 (1974)ADSCrossRefGoogle Scholar
  3. 3.
    K. Antonowich, Phys. Status Solidi (a) 28(2), 497 (1975)ADSCrossRefGoogle Scholar
  4. 4.
    N. Hannay, T. Geballe, B. Matthias et al., Phys. Rev. Lett. 14(7), 225 (1965)ADSCrossRefGoogle Scholar
  5. 5.
    A. Hebard, M. Rosseinky, R. Haddon et al., Nature 350, 600 (1991)ADSCrossRefGoogle Scholar
  6. 6.
    K. Tanigaki, T. Ebbesen, S. Saito et al., Nature 352(6332), 222 (1991)ADSCrossRefGoogle Scholar
  7. 7.
    Z. Tang, L. Zhang, N. Wang et al., Science 292(5526), 2462 (2001)ADSCrossRefGoogle Scholar
  8. 8.
    G. Zhao, Y. Wang (2001). arXiv:cond-mat/0111268
  9. 9.
    I. Takesue, J. Haruyama, N. Kobayashi et al., Phys. Rev. Lett. 96(5), 057001 (2006)ADSCrossRefGoogle Scholar
  10. 10.
    R.R. Da Silva, J. Torres, Y. Kopelevich, Phys. Rev. Lett. 87(14), 147001 (2001)ADSCrossRefGoogle Scholar
  11. 11.
    S. Moehlecke, Y. Kopelevich, M. Maple, Phys. Rev. B 69(13), 134519 (2004)ADSCrossRefGoogle Scholar
  12. 12.
    T. Scheike, W. Böhlmann, P. Esquinazi et al., Adv. Mater. 24(43), 5826 (2012)CrossRefGoogle Scholar
  13. 13.
    T.T. Heikkilä, N.B. Kopnin, G.E. Volovik, JETP Lett. 94(3), 233 (2011)ADSCrossRefGoogle Scholar
  14. 14.
    M.M. Ugeda, I. Brihuega, F. Guinea et al., Phys. Rev. Lett. 104(9), 096804 (2010)ADSCrossRefGoogle Scholar
  15. 15.
    E. Tang, J.W. Mei, X.G. Wen, Phys. Rev. Lett. 106(23), 236802 (2011)ADSCrossRefGoogle Scholar
  16. 16.
    K. Sun, Z. Gu, H. Katsura et al., Phys. Rev. Lett. 106(23), 236803 (2011)ADSCrossRefGoogle Scholar
  17. 17.
    Z.X. Shen, D.S. Dessau, Phys. Rep. 253(1), 1 (1995)ADSCrossRefGoogle Scholar
  18. 18.
    R. Nandkishore, L. Levitov, A. Chubukov, Nat. Phys. 8(2), 158 (2012)CrossRefGoogle Scholar
  19. 19.
    B. Uchoa, A.C. Neto, Phys. Rev. Lett. 98(14), 146801 (2007)ADSCrossRefGoogle Scholar
  20. 20.
    N. Kopnin, T. Heikkilä, G. Volovik, Phys. Rev. B 83(22), 220503 (2011)ADSCrossRefGoogle Scholar
  21. 21.
    J. González, F. Guinea, M. Vozmediano, Phys. Rev. B 63(13), 134421 (2001)ADSCrossRefGoogle Scholar
  22. 22.
    J. Bardeen, L. Cooper, J. Schrieffer, Phys. Rev. 108(5), 1175 (1957)ADSMathSciNetCrossRefGoogle Scholar
  23. 23.
    N. Kopnin, M. Ijäs, A. Harju, T. Heikkilä, Phys. Rev. B 87(14), 140503 (2013)ADSCrossRefGoogle Scholar
  24. 24.
    L. Feng, X. Lin, L. Meng et al., Appl. Phys. Lett. 101(11), 113113 (2012)ADSCrossRefGoogle Scholar
  25. 25.
    W. Yan, M. Liu, R.F. Dou et al., Phys. Rev. Lett. 109(12), 126801 (2012)ADSCrossRefGoogle Scholar
  26. 26.
    G. Kresse, J. Furthmüller, Phys. Rev. B 54(16), 11169 (1996)ADSCrossRefGoogle Scholar
  27. 27.
    J.P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 77(18), 3865 (1996)ADSCrossRefGoogle Scholar
  28. 28.
    Y. Wang, Y. Huang, Y. Song et al., Nano Lett. 9(1), 220 (2008)ADSCrossRefGoogle Scholar
  29. 29.
    M. Vozmediano, M. Lopez-Sancho, T. Stauber, F. Guinea, Phys. Rev. B 72(15), 155121 (2005)ADSCrossRefGoogle Scholar
  30. 30.
    S.-M. Choi, S.-H. Jhi, Y.-W. Son, Phys. Rev. B 81, 081407(R) (2010)ADSCrossRefGoogle Scholar
  31. 31.
    J.-H. Wong, B.-R. Wu, M.-F. Lin, J. Phys. Chem. C 116, 8271 (2012)CrossRefGoogle Scholar
  32. 32.
    E. Tang, L. Fu, Nat. Phys. 10, 964 (2014)CrossRefGoogle Scholar
  33. 33.
    A. Zandiatashbar, G.-H. Lee, S.J. An et al., Nat. Commun. 5, 3186 (2014)ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • A. A. Valishina
    • 1
  • Y. V. Lysogorskiy
    • 1
  • O. V. Nedopekin
    • 1
  • D. A. Tayurskii
    • 1
    • 2
  1. 1.Institute of PhysicsKazan Federal UniversityKazanRussia
  2. 2.Centre for Quantum TechnologiesKazan Federal UniversityKazanRussia

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