Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit
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We are developing far-infrared (FIR) imaging sensors for low-background and high-sensitivity applications such as infrared astronomy. Previous FIR monolithic imaging sensors, such as an extrinsic germanium photo-conductor (Ge PC) with a PMOS readout integrated circuit (ROIC) hybridized by indium pixel-to-pixel interconnection, had three difficulties: (1) short cut-off wavelength (120 \(\upmu \)m), (2) large power consumption (10 \(\upmu \)W/pixel), and (3) large mismatch in thermal expansion between the Ge PC and the Si ROIC. In order to overcome these difficulties, we developed (1) a blocked impurity band detector fabricated by a surface- activated bond technology, whose cut-off wavelength is longer than 160 \(\upmu \)m, (2) a fully-depleted silicon-on-insulator CMOS ROIC which works below 4 K with 1 \(\upmu \)W/pixel operating power, and (3) a new concept, Si-supported Ge detector, which shows tolerance to thermal cycling down to 3 K. With these new techniques, we are now developing a \(32 \times 32 \) FIR imaging sensor.
KeywordsInfrared astronomy Infrared detectors Cryogenic CMOS ROIC
This work was supported by JSPS KAKENHI Grant Numbers 20244016, 23340053, and 25109005. The authors thank Mitsubishi Heavy Industry Co., Ltd. for their large effort in the fabrication of SAB BIB device. The authors also thank LAPIS Semiconductor Co., Ltd. for their large effort in the fabrication of the FD-SOI CMOS device. The authors thank TDY Inc. and Tohnic Inc. for their support on Ge detector development. The authors thank Tohoku-Microtec Co., Ltd. for their support on micro-cone-shaped Au-bump.
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