Journal of Low Temperature Physics

, Volume 167, Issue 3–4, pp 318–328

Fluctuator Model of Memory Dip in Hopping Insulators

Article

DOI: 10.1007/s10909-012-0466-1

Cite this article as:
Burin, A.L. & Kurnosov, A.K. J Low Temp Phys (2012) 167: 318. doi:10.1007/s10909-012-0466-1

Abstract

We show that the non-equilibrium dynamic in two-dimensional hopping insulators close to metal-dielectric transition is sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, including a memory dip in a field dependence of conductance.

Keywords

Amorphous semiconductors Low temperature glasses Two level systems 

Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Department of ChemistryTulane UniversityNew OrleansUSA

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