Fluctuator Model of Memory Dip in Hopping Insulators
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- Burin, A.L. & Kurnosov, A.K. J Low Temp Phys (2012) 167: 318. doi:10.1007/s10909-012-0466-1
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We show that the non-equilibrium dynamic in two-dimensional hopping insulators close to metal-dielectric transition is sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, including a memory dip in a field dependence of conductance.