Photoluminescence Measurement of Er,O-Codoped GaAs Under a Pulsed Magnetic Field up to 60 T
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We have performed photoluminescence (PL) measurements on magnetic semiconductor GaAs:Er,O under pulsed magnetic fields up to 60 T at 4.2 K. We have succeeded in observing the Zeeman effect of the 4 I 13/2→4 I 15/2 PL transition of the Er3+ in the high magnetic field region. The effective g-factor of the dominant PL transition is estimated to be g eff=1.54±0.04. This value is in reasonable agreement with the theoretical value based on the crystal field theory.
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