Quantum Interference Effects in p-Si1−x Ge x Quantum Wells
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Quantum interference effects, such as weak localization and electron-electron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−x Ge x quantum wells with 0.13<x<0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field.
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