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Journal of Low Temperature Physics

, Volume 159, Issue 1–2, pp 230–233 | Cite as

Quantum Interference Effects in p-Si1−x Ge x Quantum Wells

  • D. R. Leadley
  • V. V. Andrievskii
  • I. B. Berkutov
  • Y. F. Komnik
  • T. Hackbarth
  • O. A. Mironov
Article

Abstract

Quantum interference effects, such as weak localization and electron-electron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−x Ge x quantum wells with 0.13<x<0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field.

Quantum well Spin-orbit interaction Electron-phonon relaxation time 

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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • D. R. Leadley
    • 1
  • V. V. Andrievskii
    • 2
  • I. B. Berkutov
    • 2
  • Y. F. Komnik
    • 2
  • T. Hackbarth
    • 3
  • O. A. Mironov
    • 4
    • 5
  1. 1.Department of PhysicsUniversity of WarwickCoventryUK
  2. 2.B.I. Verkin Institute for Low Temperature Physics and EngineeringKharkovUkraine
  3. 3.Daimler AGForschungszentrum UlmUlmGermany
  4. 4.Warwick Seminano R&D CentreUniv. of Warwick Science ParkCoventryUK
  5. 5.ILHMF and Low TemperaturesWroclaw 47Poland

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