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Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes

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Abstract

Monoclinic WO3-nanoplate arrays have been effectively deposited via simple jet nebulizer spray pyrolysis technique at an optimized substrate temperature of 400 °C. These WO3-nanoplate arrays were used as an insulating layer in the metal–insulator–semiconductor (MIS) structure based Schottky barrier diodes. The effect of WO3 mol concentration during the deposition process was systematically interpreted with respect to the structural, morphological, optical and electrical properties of WO3-nanoplate array films. XRD pattern exposed the polycrystalline nature of the prepared films with a monoclinic phase. At higher concentration of 0.25 M WO3-nanoplates were firmly interconnected together and has been analyzed by a FE-SEM. From UV–Vis spectroscopy, the band gap values of the WO3 were found to vary from 3.2 to 3.4 eV with mole concentrations. DC electrical study recorded a steep increase in the electrical conductivity for the film prepared with 0.2 M of WO3. Notably, all the diodes exhibited positive photoresponse under illumination. Particularly, the MIS diode fabricated with 0.2 M revealed higher photoresponsivity and sensitivity of 960.85% and 33.40 mA W−1 respectively.

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Acknowledgements

The authors gratefully acknowledge the financial support from the DST, Government of India, for the major Research Project (EMR/2016/007874).

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  1. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, Tamil Nadu, 641 020, India

    R. Marnadu, J. Chandrasekaran, P. Vivek & V. Balasubramani

  2. Department of Physics, Dr. Mahalingam College of Engineering and Technology, Pollachi, Tamil Nadu, 642 003, India

    S. Maruthamuthu

  3. Coimbatore Institute of Technology, Coimbatore, Tamil Nadu, 641 014, India

    P. Balraju

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Marnadu, R., Chandrasekaran, J., Maruthamuthu, S. et al. Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes. J Inorg Organomet Polym 30, 731–748 (2020). https://doi.org/10.1007/s10904-019-01285-y

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