Pr-doped Cu2O films were deposited on Cu sheet substrates by hydrothermal method with different doping concentrations of Pr(NO3)3. The result shows that undoped and Pr-doped Cu2O thin films are all p-type semiconductors. Compared with undoped Cu2O, the photovoltage, photocurrent density, and carrier concentration of Pr-doped Cu2O increase to 0.4401 V, 1.1 mA/cm2, and 9.66 × 1019 cm−3, respectively. And the increments are 0.0828 V, 0.52 mA/cm2, and 8.931 × 1019 cm−3, respectively. The increments of the capacitances of Pr doping modification illustrate that Pr element has a strong passivation effect on the composite of electrons and holes, thus improving the photoelectric performance of Cu2O. The preferential growth surface of Pr-doped Cu2O film is (111) and (200), and the crystallinity of (111) plane is optimal. After doping modification, the grain size of Pr-doped Cu2O is increased and the particle size is relatively uniform. The mass percentage of Pr element is 0.46% and the forbidden band width reduces from 2.02 to 1.83 eV. XPS peak fitting of Pr-doped Cu2O indicates that Pr element is doped into Cu2O film.
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Zhao, Y., Li, Y., Wu, Y. et al. Preparation and photoelectric properties of praseodymium-doped cuprous oxide thin films. J Mater Sci: Mater Electron (2020). https://doi.org/10.1007/s10854-020-02855-4