Correction to: Dielectric relaxation and thermally activated a.c. conduction in (PVDF)/(rGO) nano-composites: role of rGO over different fillers
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Correction to: Journal of Materials Science: Materials in Electronics (2018) 29:18271–18281 https://doi.org/10.1007/s10854-018-9941-z
Unfortunately, the original version of this article has been published with error in Abstract, Table 1, Sect. 3.5 and Figs. 5 and 9.
This has been corrected by publishing this correction article.
The corrections are given below:
In the third sentence of the abstract, “The dielectric measurements of PVDF/rGO nano-composites show a high dielectric constant and low dielectric loss factor.” should be written as “The dielectric measurements of PVDF/rGO nano-composites show a high dielectric constant and high dielectric loss factor at lower frequency where its values decrease with increasing frequency.”
Variation of the activation energy ΔEac and the relaxation time τm with rGO content
ΔEac(eV) at 10 kHz
ΔEac (eV) at 100 kHz
7.96 × 10−4
1.77 × 10−4
1.33 × 10−4
1.59 × 10−4
2.65 × 10−4
In Sect. 3.5 (Effect of the temperature on the dielectric behavior of the PVDF/rGO films) of the original version, “it is observed that the value of exponent s lies in the range 0.18–0.74, which is less than unity” should be written as “It is observed that the value of exponent s lies in the range 0.74–0.18 which is less than unity.”