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Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device

  • Zhiqian Zhao
  • Xiaohong Cheng
  • Yongliang LiEmail author
  • Ying Zan
  • Haoyan Liu
  • Guilei Wang
  • Anyan Du
  • Junjie Li
  • Qingzhu Zhang
  • Gaobo Xu
  • Xueli Ma
  • Xiaolei Wang
  • Hong Yang
  • Jing XuEmail author
  • Jun Luo
  • JunFeng Li
  • Huaxiang Yin
  • Wenwu WangEmail author
Article
  • 15 Downloads

Abstract

In this work, SiGe Fin formation technique using shallow trench isolation (STI) first or STI last strategy for the high mobility channel FinFET device is systematically investigated. A 20 nm width and 35 nm height high crystalline quality of the Si0.7Ge0.3 Fin formation for STI first scheme is demonstrated by utilizing a new developed Si Fin etching, Si Fin recess and SiGe selective epitaxial growth process. For the STI last strategy, a novel chemical mechanical planarization (CMP) treated three-layer SiGe strain relaxed buffer (SRB) is successfully fabricated and a 50 nm high crystal quality and atomically smooth surface Si0.5Ge0.5 layer on this SRB is attained. Moreover, a spike annealing is employed to avoid the Si0.5Ge0.5 Fin oxidation during STI densification with an acceptable STI etching rate. However, both a spike annealing and a lower temperature of traditional furnace at 850 °C or 750 °C suffer micro-trench issue during the Fin reveal process. Therefore, a new developed process, named as STI recess first, is developed to resolve both thermal instability and micro-trench issue at the same time. A minor Si0.5Ge0.5 Fin loss with a sharp Si0.7Ge0.3 SRB/Si0.5Ge0.5 interfaces for STI last scheme is realized by utilizing this new developed STI recess first process.

Notes

Acknowledgments

This work is supported in part by CAS Pioneer Hundred Talents Program, in part by the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002), and in part by the Foundation of President of the Institute of Microelectronics, Chinese Academy of Sciences (Grant No. Y9SR02X001).

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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Integrated Circuit Advanced Process Center, Institute of MicroelectronicsChinese Academy of ScienceBeijingPeople’s Republic of China
  2. 2.University of Chinese Academy of Sciences (UCAS)BeijingPeople’s Republic of China

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