Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition
- 32 Downloads
Current features of phase change memory (PCM) based on Ge2Sb2Te5 (GST) as a non-volatile memory is insufficient to meet the needs of storage class memory (SCM) such as extremely high-density, ultra-fast operating speed and long life cycle. In this study, Ti0.28Sb2Te3 (TST) device was fabricated based on atomic layer deposition (ALD) method and used as a phase change material. Due to the fast crystallization and low melting temperature of TST, the set speed can be reduced to 6 ns while the reset voltage can be decreased by 20% compared with GST-based device with the same cell structure. In addition, the ALD-deposited TST alloy showed a good gap-fill capability. These results indicate that the ALD-deposited TST film is a fast and scalable phase-change material applied to SCM.
This work was supported by the National Key Research and Development Program of China (Grant Nos. 2018YFB0407500, 2017YFB0701703, 2017YFA0206101, 2017YFA0206104, 2017YFB0405601), National Natural Science Foundation of China (Grant Nos. 61874178, 61874129, 61775008), Science and Technology Council of Shanghai (Grant No. 17DZ2291300), Shanghai Sailing Program (Grant No. 19YF1456100).
- 4.A. Bivens, P. Dube, M. Franceschini, J. Karidis, L. Lastras, M. Tsao, in 2010 IEEE International Memory Workshop (2010)Google Scholar
- 13.D.H. Im, J.I. Lee, S.L. Cho et al., in 2008 IEEE International Electron Devices Meeting (2008)Google Scholar
- 14.J.I. Lee, H. Park, S.L. Cho et al., in 2007 IEEE Symposium on VLSI Technology (2007)Google Scholar
- 27.I.S. Kim, S.L. Cho, D.H. Im et al., in 2010 Symposium on VLSI Technology (2010)Google Scholar