Mechanical characteristics and fracture behavior of GaN/DBA die-attached during thermal aging: pressure-less hybrid Ag sinter joint and Pb–5Sn solder joint
- 28 Downloads
Ag sinter joining provides superior mechanical and thermal/electrical properties and is considered to become a leading next-generation wide band-gap (WBG) die-attach material. However, the microstructural evolution and mechanical characteristics of Ag sinter joining when subjected to high temperature have never been directly compared to those same characteristics of solder materials. In this study, we have evaluated the high-temperature and long-term reliability of a GaN/DBA die-attached module by pressure-less Ag sinter joining and Pb–5Sn solder in a harsh thermal aging test. Both the Ag sinter joining and Pb–5Sn solder were subjected to a thermal aging test of up to 1000 h at 250 °C. Initial shear strength of the Ag sinter joint exceeded 42 MPa, and increased stably up to 1000 h without any defects such as interface oxidation, diffusion, or mechanical deformation. The increase in shear strength of the Ag sinter joints was the result of necking growth of the sintered Ag during thermal aging. On the other hand, the shear strength of the Pb–5Sn joints exhibited substantially decreased shear strength (by 60%) after aging 250 h. NixSnx intermetallic compounds (IMC) were also formed and serious interface degradation occurred during the aging process. These microstructure changes and mechanical characteristics have an important influence on mechanical reliability and, with that in mind, the tendency of fracture mechanism was investigated in detail by SEM–EDX. This study systematically examines the fracture mechanism on the microstructure of a DBA substrate and on high-temperature packaging during thermal aging tests for WBG semiconductor device applications.
This work was supported by the JST Advanced Carbon Technology Research and Development Program (ALCA) project “Development of a high frequency GaN power module package technology” (Grant No. JPMJAL1610). The author is thankful to the Network Joint Research Centre for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials.
- 2.M. Le-Huu, F.F. Schrey, M. Grieb, H. Schmitt, V. Häublein, A.J. Bauer, H. Ryssel, L. Frey, NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications. Mater. Sci. Forum. 645–6648, 1143–1146 (2010). https://doi.org/10.4028/www.scientific.net/MSF.645-648.1143 CrossRefGoogle Scholar
- 11.L. Bartolomeo, L. Abbatelli, M. Macauda, F. Di, G. Catalisano, M. Ryzek, D. Kohout, Wide band gap materials : revolution in automotive power electronics. in International Electric Vehicle Technology & Automobile Power Electronics Japan Conference (EVTec & APE Japan, 2016) pp. 2–6Google Scholar
- 12.M. Hoshi, Electric vehicles and expectations for wide bandgap power devices, in: Proc. Int. Symp. Power Semicond. Devices ICs, 2016: pp. 5–8. https://doi.org/10.1109/ispsd.2016.7520765
- 18.S. Menon, E. George, M. Osterman, M. Pecht, High lead solder (over 85%) solder in the electronics industry : RoHS exemptions and alternatives High lead solder (over 85%) solder in the electronics industry : RoHS exemptions and alternatives. J. Mater. Sci. Mater. Electron. 26(6), 4021–4030 (2015). https://doi.org/10.1007/s10854-015-2940-4 CrossRefGoogle Scholar
- 24.A. Lindemann, G. Strauch, Properties of direct aluminium bonded substrates for power semiconductor components, PESC Rec.—IEEE Annu. Power Electron. Spec. Conf. 6 (2004) 4171–4177. https://doi.org/10.1109/pesc.2004.1354737.
- 30.Y. Liu, Y. Xu, Y. Liu, Reliability modeling analysis of a power module, in: 2013 14th Int. Conf. Therm. Mech. Multi-Physics Simul. Exp. Microelectron. Microsystems, EuroSimE 2013, 2013: pp. 1–11. https://doi.org/10.1109/eurosime.2013.6529930.
- 31.J. Dai, J. Li, P. Agyakwa, M. Corfield, C.M. Johnson, Comparative thermal and structural characterization of sintered nano-silver and high-lead solder die attachments during power cycling. IEEE Trans. Device Mater. Reliab. 18, 256–265 (2018). https://doi.org/10.1109/TDMR.2018.2825386 CrossRefGoogle Scholar
- 32.M. Knoerr, S. Kraft, A. Schletz, Reliability Assessment of Sintered Nano-Silver Die Attachment for Power Semiconductors, in: 2010 12th Electron. Packag. Technol. Conf., IEEE, 2010, pp. 56–61.Google Scholar
- 33.Y. Jeon, K. Paik, Studies on Ni-Sn intermetallic compound and P-rich Ni layer at the electroless nickel UBM—solder interface and their effects on flip chip solder joint reliability, in: components pp. 1–7. https://doi.org/10.1109/ectc.2001.928003