Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2−1.5xPrxZr0.52Ti0.48O3 thin films prepared by sol–gel method

  • Da Chen
  • Xing Wang
  • Renkai Zhang
  • Fei Ding
  • Fengwei Wang
  • Biao Li
  • Helin ZouEmail author


Pb1.2−1.5xPrxZr0.52Ti0.48O3 (PPZT, x = 0%, 1%, 2%, 3%, 4%, 5%) thin films were prepared by sol–gel method on Pt(111)/Ti/SiO2/Si(100) substrates to investigate the effects of Pr doping on the crystalline structure, microstructure, dielectric properties, ferroelectric properties, and fatigue properties of PPZT thin films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that all the samples have completely perovskite structure with (100) preferred orientation. The maximum dielectric constant and remnant polarization were obtained in 2% Pr-doped film. The results of fatigue test revealed that the fatigue properties of PPZT films doped with Pr concentrations of 1% and 2% were significantly improved.



Funding was supported by National Natural Science Foundation of China (Grant No. 51775088).


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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Da Chen
    • 1
  • Xing Wang
    • 1
  • Renkai Zhang
    • 1
  • Fei Ding
    • 1
  • Fengwei Wang
    • 1
  • Biao Li
    • 1
  • Helin Zou
    • 1
    Email author
  1. 1.Key Laboratory for Micro/Nano Technology and Systems of Liaoning ProvinceDalian University of TechnologyDalianChina

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