Design and microelectronic analysis of Au/ZnTe:I/CdTe:I/GaAs/In photosensor for optoelectronic applications using MBE technology
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Molecular beam epitaxy was applied to evaporate a set of Au/ZnTe:I/CdTe:I/GaAs/In heterostructures. The resulted heterostructures were examined for photovoltaic energy conversion application. Electrical characteristics were studied for understanding the relevant electrical transport mechanisms. The current–voltage (I–V) characteristics were checked under dark and light conditions. Ideality factor indicates the recombination mechanisms in the designed device; its value equals (3.22). Under various light intensities (1–140 mW cm−2), the I–V curves are affected highly by reverse voltage bias. The open-circuit voltage increases exponentially with the illumination and its values of this device increased with increasing light intensity (L), where 55 mV at 1 mW cm−2 and 465 mV at 140 mW cm−2. Electrical as well as power related parameters of the designed device were interpreted. Photosensitivity and Responsitivity of the studied device showed a high photoresponse under different light intensities. Au/ZnTe:I/CdTe:I/GaAs/In heterostructures is a promising material for photosensor and optoelectronic applications.
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