Natively textured surface of Ga-doped ZnO films electron transporting layer for perovskite solar cells: further performance analysis from device simulation

  • Yichuan ChenEmail author
  • Yuehui HuEmail author
  • Qi Meng
  • Hui YanEmail author
  • Weiqiang Shuai
  • Zhiming Zhang


In this work, the natively textured surface of gallium-doped zinc oxide (GZO) films were obtained onto quartz substrates by radio frequency magnetron sputtering. The optimal optoelectronic properties of GZO thin film exhibited the lowest resistivity 6.8 × 10−4 Ω cm, where the carrier concentration and carrier mobility were 5.3 × 1020 cm−3 and 17.3 cm2 V−1 s−1, respectively, and the transmittance above 87% in the range of 0.4–1.2 µm. Meanwhile, this GZO thin film had a low surface work function of 3.9 eV. We used a two-steps spin-coating method to deposit the perovskite films. The optical band gap of this perovskite films is 1.561 eV. The planar perovskite solar cells device modeling based on GZO electron transporting layer was performed by the Solar Cell Capacitance Simulator program. We inputted the electrical and optical parameters of GZO thin film in our perovskite solar cells simulation model. With the increasing of carrier concentration, a high-power conversion efficiency of 20.167% was obtained. Modifying GZO surface, obtaining a suitable surface work function (3.9 eV), it could reduce the interlayer contact barrier and optimize the energy level matching. At the perovskite/electron transporting layer interface, no electron barrier was formed, which facilitated electron extraction and reduced interface recombination. The higher power conversion efficiency of 21.132% was obtained.



This study was financially supported by the following funds: The National Natural Science Foundation of China (NSFC 61464005, 61574009, 11574014); Also, the author Y.C Chen would like to thank Professor Marc Burgelman, Department of Electronics and Information Systems, University of Gent for the development of the SCAPS software package and allowing its use.

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.


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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.College of Materials Science and EngineeringBeijing University of TechnologyBeijingChina
  2. 2.School of Mechanical and Electrical EngineeringJingdezhen Ceramic InstituteJingdezhenChina

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