Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem
To realize an asymmetric function blockable sneak currents in the resistive switching memory device, we propose a novel schottky diode based high charge density resistive switching device based on zinc oxide (ZnO) and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) heterojunction, which is structured with bottom and top electrode as indium tin oxide (ITO) and silver (Ag), respectively. The heterojunction layers are deposited through a spin coater on ITO coated polyethylene terephthalate (PET) substrate. The hetrojunction resistive switching device is measured over more than 500 endurance cycles on dual polarity voltage of ± 3 V. The stability of the memory device is analyzed for more than 30 days with high resistance state (HRS) and low resistance state (LRS) as 531047870.8 Ω and 1001636.011 Ω, respectively, at reading voltage of 1.28 V in forward current, and its Roff/Ron ratio is recorded as ~ 530. In reverse current, the HRS ~ 153081392.6 Ω and LRS ~ 19034020.25 Ω are recorded at voltage read of ~ − 1.28 V and they are both high resistance as its Roff/Ron ratio is ~ 8.04. This asymmetric function insures that the proposed memory device helps to reduce the sneak current. Hence, it can be applied in flexible resistive switching devices to blocking sneak current problem.
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2016R1A2B4015627).
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