Optical and thermal quenching properties of Al-doped Ba1.98SiO4:0.02Eu2+ phosphor synthesized with different Si3N4/SiO2 ratio
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An intense emission green color phosphor of Al-doped Ba1.98SiO4:0.02Eu2+ synthesized with different Si3N4/SiO2 ratio was prepared by conventional sintering method. The X-ray diffraction patterns, the photoluminescence, scanning micrograph and thermal quenching properties of Ba1.98SiO4:0.02Eu2+ with different Si3N4/SiO2 ratio were investigated in detail. As the Si3N4/SiO2 ratio increases, the emission intensity enhanced gradually until the optimum Si3N4/SiO2 ratio reached 3/2. The PL intensity with Si3N4/SiO2 = 3/2 is about four times of the initial intensity of Ba1.98SiO4:0.02Eu2+ phosphor and the reason was discussed clearly. Furthermore, when we introduced Al3+ ions into the host, the samples exhibited outstanding optical properties and smaller thermal quenching behavior compared with Ba1.98SiO4:0.02Eu2+ phosphor. The emission intensity of Ba1.98Si1−xAlxO4:0.02Eu2+ series increased until x reached 7% and the emission intensity of x = 0.07 is 5 times of the originated intensity of Ba1.98SiO4:0.02Eu2+ synthesized without Si3N4. The smaller thermal quenching behavior of Al-doped phosphors was studied clearly, too. All the results suggested that Al-doped Ba1.98SiO4:0.02Eu2+ phosphor synthesized with Si3N4/SiO2 = 3/2 can be a candidate green phosphor for WLEDs.
This work is supported by the National Natural Science Foundation of China (Nos. 11704043, 51702378) and the Special Foundation for theoretical physics Research Program of China (Nos. 11747113, 11747117).
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