Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method
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In the present report, a simple and cost-effective successive ionic layer adsorption and reaction method is employed to develop self-rectifying ZnO thin film memory device. The nature of pinched hysteresis loop and frequency dependent I–V characteristics depicts that the developed device behaves like a memristive device. Moreover, significant pinched hysteresis loop at 1 MHz was observed which could be further exploited for the development of new class of high-frequency circuits by using ZnO memristive device. The observed analog memory with scan rate dependent synaptic weights behavior suggests that the ZnO memristive device is a potential candidate for the development of electronic synaptic devices for neuromorphic computing application. Furthermore, multilevel resistive switching with good memory window was obtained at 0.2 V read voltage. The developed device switched successfully in consecutive 10 k resistive switching cycles and can retain multilevel resistance states over 1000 s without any observable degradation in the resistance states. The insights drawn from electrical characterization indicates that the device charge and charge–magnetic flux relations depend upon the frequency of the applied signal. Furthermore, we have presented the criteria for differentiating the experimental device as a memristor or memristive device based on the nature of time domain charge and double valued charge–magnetic flux relation. The resistive switching effect of the present device is manifested due to the unified effect of the Ohmic and Schottky conduction mechanisms.
This work was supported by funding from the Shivaji University, Kolhapur under the ‘Research Initiation Scheme’ and by the MOTIE (Ministry of Trade, Industry & Energy) (No. 10053098) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.
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Conflict of interest
The authors have no conflict of interest to disclose.
- 1.Y. Pershin, M. Di Ventra, Memory effects in complex materials and nanoscale systems. Adv. Phys. 60(2), 145–227 (2011)Google Scholar
- 2.T.D. Dongale, K.P. Patil, S.B. Mullani, K.V. More, S.D. Delekar, P.S. Patil, P.K. Gaikwad, R.K. Kamat, Investigation of process parameter variation in the memristor-based resistive random access memory (RRAM): effect of device size variations. Mater. Sci. Semicond. Process. 35, 174–180 (2015)CrossRefGoogle Scholar
- 8.T.D. Dongale, K.V. Khot, S.V. Mohite, N.K. Desai, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat, Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM, Int. Nano Lett. 7(3), 209–216 (2017)CrossRefGoogle Scholar
- 12.P.S. Pawar, R.S. Tikke, V.B. Patil, N.B. Mullani, P.P. Waifalkar, K.V. Khot, A.M. Teli, A.D. Sheikh, T.D. Dongale, A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method. Mater. Sci. Semicond. Process. 71, 102–108 (2017)CrossRefGoogle Scholar
- 17.A. Fantini, L. Goux, R. Degraeve, D. Wouters, N. Raghavan, G. Kar, A. Belmonte, Y. Chen, B. Govoreanu, M. Jurczak, Intrinsic switching variability in HfO2 RRAM. In 5th IEEE International Memory Workshop (IMW) (2013), p. 30–33Google Scholar