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Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 21, pp 18668–18673 | Cite as

Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method

  • Fuan Wang
  • Jiangang Zhou
  • Xing Wang
  • Da Chen
  • Qiusen Wang
  • Jiao Dou
  • Qi Li
  • Helin Zou
Article
  • 47 Downloads

Abstract

Pb1.2−xCexZr0.52Ti0.48O3 (PCZT, x = 0%, 0.1%, 0.5%, 1%, 2% and 3%) thin films with the thickness of about 1 µm were fabricated by sol–gel process and traditional annealing process on Pt/Ti/SiO2/Si substrates to investigate the effect of cerium doping on crystalline orientation, microstructure and electric properties of the samples. (100)-oriented Pb1.2−xCexZr0.52Ti0.48O3 films were obtained for all x values. The results of Scanning electron microscopy (SEM) revealed that the 0%, 0.1%, 0.5%, and 1% cerium doped Pb1.2−xCexZr0.52Ti0.48O3 films have a dense columnar perovskite structure. The maximum dielectric constant and remnant polarization were obtained for 0.1% Ce-doped film.

Notes

Acknowledgements

This paper was supported by National Natural Science Foundation of China (No. 51775088).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Fuan Wang
    • 1
  • Jiangang Zhou
    • 2
  • Xing Wang
    • 1
  • Da Chen
    • 1
  • Qiusen Wang
    • 1
  • Jiao Dou
    • 1
  • Qi Li
    • 1
  • Helin Zou
    • 1
    • 3
  1. 1.Key Laboratory for Micro/Nano Technology and Systems of Liaoning ProvinceDalian University of TechnologyDalianPeople’s Republic of China
  2. 2.College of Physics Science and TechnologyDalian UniversityDalianChina
  3. 3.Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of EducationDalian University of TechnologyDalianPeople’s Republic of China

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