Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications
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We report the fabrication and characterization of a facile and low-cost solution processed CuI/Si junction device for ultraviolet photodetector applications. The properties of CuI films are analyzed by Hall-effect measurement, X-ray diffraction pattern, ultraviolet–visible absorption spectrum, and field emission scanning electron microscope. The amount of iodine vacancies of CuI could be adjusted through subsequence anneals with/without iodine steam. Moderate process would improve the CuI crystallization and reduce iodine vacancies, and so thus raise the photocurrent and photo responsivity of CuI/Si junction. The made junction device performs a maximum Iphoto/Idark ratio of 3 × 104 to an ultraviolet light of 365 nm wavelength.
This work was supported by the Ministry of Science and Technology, Taiwan, through Grant No. 104-2221-E-018-020. The authors thank the Department of Physics, National Changhua University of Education for providing the equipment.
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