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Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 21, pp 18051–18058 | Cite as

Bias voltage effect on the dielectric properties of organic–inorganic blend SiNWs elaborated via metal assisted chemical etching

  • Hamza Saidi
  • Walid Aloui
  • Abdelaziz Bouazizi
Article

Abstract

The electrical proprieties of poly (3-hexylthiophene): Silicon nanowires (P3HT: SiNWs) nanocomposite was investigated by impedance spectroscopy technique. The effect of bias voltage under and without illumination was discussed. Indeed, the imaginary part of the impedance shows a high relaxation frequency related to Maxwell–Wagner–Sillars (MWS) polarization. The relaxation time was found in the range of ms and it was shifted towards high frequency with increasing the bias voltage especially at 0.6 V At bias voltage equal to Vth and under illumination, the conductivity increases because the trapped charges acquire the necessary energy to escape from the interface and the hopping time found was reduced. This indicates a change of the conduction mechanism. The Cole–Cole diagram was excellently fitted through an equivalent circuit including a chemical capacitance Cµ, a contact electrical resistance Rs and recombination resistance Rp.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de MonastirUniversité de MonastirMonastirTunisia

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