Microstructure and crystallization kinetics of Ge2Sb2Te5–Sn phase change materials
In this paper, the effects of Sn doping on the microstructure and electrical properties of amorphous and crystalline Ge2Sb2Te5 thin films are reported. The thin films bonding states are measured through X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy, which prove that the bonding states of Ge2Sb2Te5–Sn thin films regularly change with the additions of various Sn contents. Sn atoms alter the chemical surrounding of Te atoms significantly, having a low impact on the bonding environment of Sb atoms, since the additional Sn atoms bond with Te atoms and lead to the SnTe phase formation. Both the homogeneity of bonding characteristics and crystallinity in Ge2Sb2Te5–Sn thin films are improved. The atomic arrangement of the crystalline states Ge2Sb2Te5–Sn thin films is also obtained. It could be inferred that the Sn addition lead to higher crystalline interplanar spacing and arrangement of many disordered atoms. Furthermore, the corresponding activation energy value (EA) of Ge2Sb2Te5–Sn thin films is calculated. This display that the EA values of Ge2Sb2Te5–Sn increase compared to the pure Ge2Sb2Te5 thin films, since the Ge2Sb2Te5–Sn thin film structures are stabilized due to the compressed bonds and various bonding states.
This work was supported by the National Natural Science Foundation of China (No. 51771023).
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