Effect of potassium doping for ultrasonic sprayed Cu2SnS3 thin films for solar cell application
In this work, potassium-containing Cu2SnS3 thin films (KxCu2−xSnS3) were fabricated by a simple and low-cost ultrasonic spray pyrolysis method on glass substrates with different potassium doping concentration. Effects of various potassium concentrations on the structural, morphological and optical properties of the films were systematically investigated. The results indicate that potassium doping can well enhance the growth of particle size and decrease the band gap of the film from to 1.55 to 1.26 eV. Solar cell devices with a structure of glass/FTO/K2−xCu2SnS3/CdS/ZnO/AZO have been prepared and obvious solar cell device performance improvement has been observed by 2 at% potassium doping. This potassium-containing Cu2SnS3 thin films could be a promising absorber material for high efficiency solar cell.
This project was financed by the National Science Foundation of China (No. 61704057), Natural Science Foundation of Fujian Province (No. 2018J01471), the China Postdoctoral Science Foundation (Nos. 2016M601543 and 2018T110374), and natural Science Foundation of the Higher Education Institutions of Jiangsu Province (No. 17KJD240002).
- 4.K. Anuar, S.N. Ho, W.T. Tan, M.S. Atan, D. Kuang, H.M. Jelas et al., Effects of solution concentration on the properties of Cu4SnS4 thin films. Mater. Sci. 14, 204–209 (2008)Google Scholar
- 9.M. Nakashima, J. Fujimoto, T. Yamaguchi, J. Sasano, M. Izaki, KF addition to Cu2SnS3 thin films prepared by sulfurization process. Jpn. J. Appl. Phys. 56, 2C–4C (2017)Google Scholar
- 10.P.A. Fernandes, P. Salomé, A.F. Da Cunha, CuxSnSx+ 1 (x = 2, 3) thin films grown by sulfurization of metallic precursors deposited by DC magnetron sputtering. Phys. Status Solidi C 7, 901–904 (2010)Google Scholar