Investigation on optical, thermal, mechanical, dielectric and ferroelectric properties of non linear optical single crystal guanidinium manganese sulphate
Semi organic nonlinear optical crystal of guanidinium manganese sulphate hydrate (GuMnS) was grown from its aqueous solution by slow evaporation solution growth technique. Formation of the crystalline compound was confirmed by powder X-ray diffraction analysis (PXRD).The compound crystallizes in the triclinic crystal system with space group Pī. The functional groups present in the crystal have been identified by FTIR spectroscopic analysis. UV–Vis–NIR spectral study indicates that the grown crystal is transparent in the entire visible region with a lower cut off wavelength 229 nm and the band gap value is found to be 5.06 eV. Nonlinear refractive index (n2), absorption coefficient (β) and third order nonlinear susceptibility (χ(3)) were determined using Z-scan technique. Thermo gravimetric and differential thermo gravimetric analyses (TG-DTG) were performed to analyse the thermal behaviour of the grown crystal. The dielectric constant and dielectric loss were studied as a function of frequency of the applied field. The ferroelectric nature of the grown crystal was analysed by P–E hysteresis loop. The mechanical behaviour of the grown crystal was studied by Vickers’s micro hardness test. The laser induced surface damage threshold (LDT) of the grown crystal was found to be 1.157 GW/cm2. The obtained results show that guanidinium manganese sulphate crystals are potential materials in NLO device applications.
One of the authors (AR) is grateful to SAIF, IIT-M for characterisation techniques and also to the management of Loyola College—Times of India Major research project, Chennai 34 for providing hardness study.
- 1.G. Xing, M. Jiang, Z. Shav, D. Xu, Chin. J. Lasers 14, 357 (1987)Google Scholar
- 2.S. Velsko, Laser program annual report, Lawrence, Livermore, National laboratory, 1990Google Scholar
- 10.M. Fleck, L. Bohaty, E. Tilmanns, Solid State Sci. 469, 6 (2004)Google Scholar
- 13.P. Christhuraj, M. Lalitha, S. Anbarasu, P.S. Joseph, A. Jestin Lenus, T. Kishore Kumar, D. Prem Anand, J. Sciencia Acta Xaveriana 3, 11 (2012)Google Scholar
- 20.N.V. Prasad, G. Prasad, T. Bhimasankaran, S.V. Suryanarayana, G.S. Kuamar, Ind. J. Pure Appl. Phys. 34, 639 (1996)Google Scholar
- 24.M. Loganayaki, V. Siva sankar, P. Ramesh, M.N. Ponnuswamy, P. Murugakoothan, J. Miner. Mater. Charact. Eng. 10, 843 (2011)Google Scholar
- 26.P. Jayaprakash, P. Sangeetha, C.R.T. Kumari et al., J. Mater. Sci.: Mater. Electron. 281, 8787 (2017)Google Scholar