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Ferroelectric properties of Ag doped PbZr0.53Ti0.47O3 thin film deposited by sol–gel process

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Abstract

To suppress the generation of oxygen vacancy during the PbZr0.53Ti0.47O3 (PZT) film synthesis process, herein, the 0–3 type Ag/PZT film is chosen as a prototype to systematically investigate the mechanisms of oxygen vacancy decrease and the relationship of ferroelectric properties. The uniform and dense films were successfully fabricated on fluorine tin oxide glasses (FTO) by facile sol–gel processes. It is confirmed the existence of silver nanoparticles in the film, indicating the composite ferroelectric films are of 0–3 type. When Ag doping mole concentration is 0.010 in the sol, a large remnant polarization (Pr) of ~ 50.7 µΧ/cm2 is got, which is 37.9 µΧ/cm2 for pure PZT. UV–vis spectrum confirms the generation of Ag2O in the process of mixing the sol. Furthermore, the oxygen vacancies caused by natural evaporation of lead specie are effectively reduced because of the decomposition of Ag2O, confirmed by X-ray photoelectron spectroscopy. This work points out the generated Ag2O as the intermediate product is the key to achieve high remnant polarization in Ag/PZT based film and make it as a promising candidate for memory applications.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Grant No. 51572056, 11404321, 11572103, 51602083 and 51502055), the Natural Science Foundation of Heilongjiang Province (Grant No. JC2017001, E2015001 and E2016042), Harbin Applied Technology Research and Development Project (Grant No. 2017RAXXJ003), and the National Key Basic Research Program of China (Grant No. 2013CB632900).

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Authors and Affiliations

  1. Condensed Matter Science and Technology Institute and Department of Physics, Harbin Institute of Technology, Harbin, 150080, China

    Jinxin Wang, Guicheng Jiang, Weicheng Huang, Yunfei Chang, Bin Yang & Wenwu Cao

  2. School of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin, 150040, China

    Danqing Liu

  3. Department of Mathematics and Materials Research Institute, The Pennsylvania State University, Pennsylvania, 16802, USA

    Wenwu Cao

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  1. Jinxin Wang
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  2. Guicheng Jiang
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Correspondence to Guicheng Jiang or Bin Yang.

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Wang, J., Jiang, G., Huang, W. et al. Ferroelectric properties of Ag doped PbZr0.53Ti0.47O3 thin film deposited by sol–gel process. J Mater Sci: Mater Electron 30, 2592–2599 (2019). https://doi.org/10.1007/s10854-018-0534-7

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  • DOI: https://doi.org/10.1007/s10854-018-0534-7

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