Effect of rare element Ce doping concentration on resistive switching of HfOx film
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The switching characteristics of rare element Ce-doped HfOx films were investigated. The effect of Ce doping on oxygen defects was analyzed by X-ray photoelectron spectroscopy (XPS) and first-principle calculations. The variations of valence state of Ce and oxygen vacancies with the increase of Ce doping concentration were demonstrated. Although Ce doping increased dopants-induced oxygen vacancies in HfOx film, the density of oxygen vacancies decreased as the doping concentration increased. Besides, the introduction of Ce dopants enlarged the difference in electronegativity of Hf and O which made it harder for O to escape from HfOx film under voltage. Hence the switching behaviors of Ce-doped HfOx film were affected by multiple factors and can be effectively improved with an appropriate doping concentration (4.3%). A physical model based on the formation and rupture of conductive filaments was proposed to clarify the switching behavior of Ce-doped HfOx samples.
This work was financially supported by the National Natural Science Foundation of China (No. 51802025), the Fundamental Research Funds for the Central Universities (Nos. 300102318303, 300102318103), the Fund of the State Key Laboratory of Solidification Processing in NWPU (No. SKLSP201844).
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