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Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 23, pp 20470–20475 | Cite as

Cd2SnO4 thin films obtained by spray pyrolysis using RTA post-deposition treatments

  • D. Osorio-Rivera
  • G. Torres-Delgado
  • J. Márquez-Marín
  • R. Castanedo-Pérez
  • M. A. Aguilar-Frutis
  • O. Zelaya-Ángel
Article

Abstract

Cd–Sn system thin films were deposited by the spray pyrolysis technique to obtain Cd2SnO4. The solution consisted of tin chloride and cadmium acetate, as sources of Cd and Sn, which were dissolved in a water/isopropanol (4:1) mixture, maintaining an atomic ratio Cd/Sn = 6. The substrate temperature Ts was varied in the 410–500 °C range. XRD patterns showed Cd2SnO4 + SnO2 crystals, decreasing the contribution of SnO2 at lower Ts’s. The films (~ 160 nm) were subjected to post-deposition treatments of rapid thermal annealing (RTA) at 600 °C during 25 s, under two different atmospheres argon and vacuum. The effect of RTA treatments on the properties of this type Cd2SnO4 films has not been formerly reported. In this work, an important improvement in the crystalline quality of the films was obtained after this treatment, showing mainly the Cd2SnO4 phase. Best structural, optical and electrical properties were obtained for films treated in argon. These films showed a preferential orientation along the (222) plane of the Cd2SnO4 with a crystallite size of 35 nm, transmittance higher than 75% (400 ≤ λ ≤ 1500 nm), a resistivity of 2.6 × 10−3 Ω cm and a direct band gap of 3.51 eV.

Notes

Acknowledgements

This work was supported by Consejo Nacional de Ciencia y Tecnología (CONACyT) under projects CB-2013-01/222909 and CeMIE-Sol-PY207450/25. The authors also thanks CONACyT for the Ph.D. fellowship awarded to Ms. Diego Osorio Rivera. Special thanks to Cyntia Zúñiga Romero and Jose Eleazar Urbina for their technical support.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • D. Osorio-Rivera
    • 1
  • G. Torres-Delgado
    • 1
  • J. Márquez-Marín
    • 1
  • R. Castanedo-Pérez
    • 1
  • M. A. Aguilar-Frutis
    • 2
  • O. Zelaya-Ángel
    • 3
  1. 1.Unidad QuerétaroCentro de Investigación y de Estudios, Avanzados del I.P.NSantiago de QuerétaroMexico
  2. 2.Instituto Politécnico NacionalCentro de Investigación en Ciencia Aplicada y Tecnología AvanzadaMexico CityMexico
  3. 3.Depto. de FísicaCentro de Investigación y de Estudios, Avanzados del I.P.NMexico CityMexico

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